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FQPF9N25C / FQPF9N25CT — N-Channel QFET
®
MOSFET
November 2013
FQPF9N25C / FQPF9N25CT
N-Channel QFET
®
MOSFET
250 V, 8.8 A, 430 mΩ
Features
• 8.8 A, 250 V, R
DS(on)
= 430 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 4.4 A
• Low Gate Charge (Typ. 26.5 nC)
• Low Crss (Typ. 45.5 pF)
• 100% Avalanche Tested
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
G
D
S
G
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Drain Current
Drain Current
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
FQPF9N25C / FQPF9N25CT
250
8.8 *
5.6 *
35.2 *
±
30
285
8.8
7.4
5.5
38
o
o
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
- Derate Above 25 C
0.3
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
