Semiconductor
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
Package
TO-254AA
G
S
D
June 1998
Features
• 23A, -100V, r
DS(ON)
= 0.140Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
-
-
-
Meets Pre-RAD Specifications to 100K RAD (Si)
Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
Performance Permits Limited Use to 3000K RAD (Si)
Survives 3E9 RAD (Si)/s at 80% BV
DSS
Typically
Survives 2E12 Typically If Current Limited to IDM
7.0nA Per-RAD (Si)/s Typically
Pre-RAD Specifications for 3E13 Neutrons/cm
2
Usable to 3E14 Neutrons/cm
2
• Gamma Dot
• Photo Current
• Neutron
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron
hardness ranging from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V prod-
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-
iting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Harris Semiconductor High-Reliability Marketing group
for any desired deviations from the data sheet.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
D
G
S
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
FRF9150D, R, H
-100
-100
23
15
69
±20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain-Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I
LM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
JC
, T
STG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
©
Harris Corporation 1998
File Number
3243.2
4-1
FRF9150D, FRF9150R, FRF9150H
Pre-Radiation Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BV
DSS
V
GS(TH)
I
GSSF
I
GSSR
I
DSS1
I
DSS2
I
DSS3
I
AR
V
DS(ON)
r
DS(ON)
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G(TH)
Q
G(ON)
Q
GM
V
GP
Q
GS
Q
GD
V
SD
t
T
R
θJC
R
θJA
Free Air Operation
I
D
= 23A, V
GD
= 0
I = 23A; di/dt = 100A/µs
V
DD
= -50V, I
D
= 23A
I
GS1
= I
GS2
0
≤
V
GS
≤
20
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
= -20V
V
GS
= +20V
V
DS
= -100V, V
GS
= 0
V
DS
= -80V, V
GS
= 0
V
DS
= -80V, V
GS
= 0, T
C
= +125
o
C
Time = 20µs
V
GS
= -10V, I
D
= 23A
V
GS
= -10V, I
D
= 15A
V
DD
= -50V, I
D
= 23A
Pulse Width = 3µs
Period = 300µs, R
G
= 25Ω
0
≤
V
GS
≤
10 (See Test Circuit)
MIN
-100
-2.0
-
-
-
-
-
-
-
-
-
-
-
-
4
60
126
3
17
21
-0.6
-
-
-
MAX
-
-4.0
100
100
1
0.025
0.25
69
-3.38
0.140
170
620
ns
600
242
16
240
504
14
68
nc
86
-1.8
700
1.0
48
V
ns
o
C/W
UNITS
V
V
nA
nA
mA
A
V
Ω
nc
V
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DD
V
DS
L
R
L
V
DS
0V
DUT
+
CURRENT I
TRANSFORMER
AS
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
t
P
50Ω
+
-
DUT
50Ω
V
DD
V
GS
= -12V
R
GS
V
GS
≤
20V
50V-150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
FRF9150D, FRF9150R, FRF9150H
Post-Radiation Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
(Notes 4, 6)
(Notes 5, 6)
Gate-Source
Threshold Volts
(Notes 4, 6)
(Notes 3, 5, 6)
Gate-Body
Leakage Forward
(Notes 4, 6)
(Notes 5, 6)
Gate-Body
Leakage Reverse
(Notes 2, 4, 6)
(Notes 2, 5, 6)
Zero-Gate Voltage
Drain Current
(Notes 4, 6)
(Notes 5, 6)
Drain-Source
On-State Volts
(Notes 1, 4, 6)
(Notes 1, 5, 6)
Drain-Source
On Resistance
(Notes 1, 4, 6)
(Notes 1, 5, 6)
NOTES:
1. Pulse test, 300µs (Max)
2. Absolute value
3. Gamma = 300K RAD (Si)
4. Gamma = 10K RAD (Si) for “D”, 100K RAD (Si) for “R”. Neutron = 3E13
5. Gamma = 1000K RAD (Si). Neutron = 3E13
6. In situ Gamma bias must be sampled for both V
GS
= -10V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
7. Gamma data taken 1/18/91 on TA 17751 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988
SYMBOL
BV
DSS
BV
DSS
V
GS(TH)
V
GS(TH)
I
GSSF
I
GSSF
I
GSSR
I
GSSR
I
DSS
I
DSS
V
DS(ON)
V
DS(ON)
r
DS(ON)
r
DS(ON)
TYPE
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
FRF9150D, R
FRF9150H
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= -20V, V
DS
= 0
V
GS
= -20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0
V
GS
= 0, V
DS
= -80V
V
GS
= 0, V
DS
= -80V
V
GS
= -10V, I
D
= 23A
V
GS
= -16V, I
D
= 23A
V
GS
= -10V, I
D
= 15A
V
GS
= -14V, I
D
= 15A
MIN
-100
-95
-2.0
-2.0
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-4.0
-6.0
100
200
100
200
25
100
-3.38
-5.07
0.140
0.210
UNITS
V
V
V
V
nA
nA
nA
nA
µA
µA
V
V
Ω
Ω
4-3
FRF9150D, FRF9150R, FRF9150H
Typical Performance Characteristics
4-4
FRF9150D, FRF9150R, FRF9150H
Rad Hard Data Packages - Harris Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
E. Group B
- Attributes Data Sheet
- Group A Lot Traveler
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
G. Group B
F. Group C
H. Group C
G. Group D
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-5
