MITSUBISHI Nch POWER MOSFET
FS2KM-14A
HIGH-SPEED SWITCHING USE
FS2KM-14A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3
3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
w
¡V
DSS ...............................................................................
700V
¡r
DS (ON) (MAX) .............................................................
9.75Ω
¡I
D ...........................................................................................
2A
¡V
iso ...............................................................................
2000V
q
q
GATE
w
DRAIN
e
SOURCE
e
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
V
iso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
700
±30
2
6
25
–55 ~ +150
–55 ~ +150
2000
2
Unit
V
V
A
A
W
°C
°C
V
rms
g
Feb.1999
AC for 1minute, Terminal to case
Typical value
MITSUBISHI Nch POWER MOSFET
FS2KM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
GS
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 700V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
700
±30
—
—
2
—
—
0.72
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
7.47
7.47
1.2
270
30
5
10
12
33
21
1.0
—
Max.
—
—
±10
1
4
9.75
9.75
—
—
—
—
—
—
—
—
1.5
5.0
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
V
DD
= 200V, I
D
= 1A, V
GS
= 10V,
R
GEN
= R
GS
= 50Ω
I
S
= 1A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
MAXIMUM SAFE OPERATING AREA
10
1
7
5
3
2
tw = 10ms
POWER DISSIPATION P
D
(W)
40
DRAIN CURRENT I
D
(A)
30
20
10
0
7
5
3
2
10
–1
7
5
3
2
T
C
= 25°C
Single Pulse
100ms
1ms
10ms
100ms
DC
10
0
0
50
100
150
200
10
–2 0
10 2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
T
C
= 25°C
Pulse Test
10V
V
GS
= 20V
5V
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
P
D
= 25W
T
C
= 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
4
V
GS
= 20V
10V
DRAIN CURRENT I
D
(A)
1.6
3
1.2
P
D
= 25W
2
5V
0.8
4.5V
1
4V
0.4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
20
T
C
= 25°C
Pulse Test
V
GS
= 10V
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
40
I
D
= 3A
16
20V
30
12
20
2A
8
10
1A
4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
5
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
1
7
5
V
DS
= 10V
Pulse Test
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
4
3
2
10
0
7
5
3
2
T
C
= 25°C
3
2
125°C
75°C
1
0
0
4
8
12
16
20
10
–1 –1
10
2 3
5 7 10
0
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
Tch = 25°C
2
f = 1MH
Z
10
0
V
GS
= 0V
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0 –1
10
2 3 4 5 7 10
0
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
Ciss
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
t
d(off)
t
r
t
f
t
d(on)
Coss
Crss
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
2 3 4 5 7 10
1
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-14A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
20
Tch = 25°C
I
D
= 2A
16
V
DS
= 250V
SOURCE CURRENT I
S
(A)
8
12
400V
600V
6
T
C
= 125°C
75°C
25°C
8
4
4
2
0
0
4
8
12
16
20
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
D = 1.0
5
3
0.5
2
0.2
1.2
1.0
0.8
10
0
0.1
7
5
3
2
10
–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
