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FST10060

100 A, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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器件:FST10060

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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FST10020
THRU
FST100100
100
Amp
Schottky Barrier
Rectifier
20
to 100 Volts
POWERMOD
A
N
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
MCC
Part Number
FST10020
FST10030
FST10035
FST10040
FST10045
FST10060
FST10080
FST110100
Maximum
RMS Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
C
E
B
M
Q
R
P
F
G
J
K
D
L
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
FST10020-10045
FST10060
FST10080-100100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
100
A
1000A
T
A
=
85°C
8.3ms, half sine
I
FM
=
50.0A;
T
A
= 25°C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
P
P
H
DIMENSIONS
INCH
ES
MIN
1.995
.330
.495
.182
.990
1.490
1.500
.120
------
.240
.490
.330
.175
.035
.445
.890
MM
MIN
50.67
7.62
12.57
4.62
25.12
37.85
38.10
3.05
------
6.10
12.45
8.38
4.45
0.89
11.30
22.61
V
F
.63 V
.75 V
.84 V
I
R
2
mA
T
A
= 25°C
MAX
2.005
.325
.505
.192
1.010
1.510
1.525
.130
.400
.260
.510
.350
.195
.045
.455
.910
MAX
50.93
8.26
12.83
4.88
26.65
38.35
38.70
3.30
10.16
6.60
12.95
6.90
4.95
1.14
11.56
23.11
NOTE
C
J
300pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com
FST10020
thru
FST100100
Figure 1
Typical Forward Characteristics
200
100
60
40
100
20
25°C
Amps 10
6
4
2
1
.6
.4
.2
.1
0.6
0.8
1.0
1.4
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.8
2.0
0
20
Amps
40
80
120
MCC
Figure 2
Forward Derating Curve
60
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
70
90
°C
110
130
150
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
Figure 3
Junction Capacitance
1000
600
400
200
pF
T
J
=25°C
100
60
40
20
10
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
Junction Capacitance - pF
versus
Reverse Voltage - Volts
www.mccsemi.com
FST10020
thru
FST100100
Figure 4
Typical Reverse Characteristics
1000
600
400
1000
200
100
60
40
20
mAmps
1.5
1.4
1.3
1.2
1.1
.6
.4
.2
.1
10
20
T
A
=25°C
40
60
Volts
Instantaneous Reverse Leakage Current - MicroAmperes
versus
Percent Of Rated Peak Reverse Voltage - Volts
80
100
120
T
A
=125°C
0
1
2
4
Amps
800
600
400
200
MCC
Figure
5
Peak Forward Surge Current
1200
6
8 10 20
Cycles
40
60 80 100
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
www.mccsemi.com
查看更多>
参数对比
与FST10060相近的元器件有:FST10020、FST10030、FST10035、FST10040、FST10080、FST10045、FST110100。描述及对比如下:
型号 FST10060 FST10020 FST10030 FST10035 FST10040 FST10080 FST10045 FST110100
描述 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE 100 A, SILICON, RECTIFIER DIODE
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