Ordering number : ENA1324
FTD7010
SANYO Semiconductors
DATA SHEET
FTD7010
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
1.8V drive.
Mount heigt 1.1mm.
Coposite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1000mm
×0.8mm)
1unit
When mounted on ceramic substrate (1000mm
×0.8mm)
2
2
Conditions
Ratings
--12
±10
-
-6
-
-30
1.1
1.2
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
Conditions
-1mA,
VGS=0V
ID=-
-8V,
VGS=0V
VDS=-
-12V,
VGS=0V
VDS=-
VGS=±8V, VDS=0V
-6V,
ID=-
-1mA
VDS=-
-6V,
ID=-
-3A
VDS=-
-
-0.4
7.2
12
Ratings
min
--12
-
-1
-
-10
±10
--1.3
typ
max
Unit
V
μA
μA
μA
V
S
Marking : D7010
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
92408PA TI IM TC-00001560 No. A1324-1/4
FTD7010
Continued from preceding page.
Parameter
Symbol
RDS(on)1
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
-3A,
VGS=-
-4.5V
ID=-
-1.5A,
VGS=-
-2.5V
ID=-
-0.5A,
VGS=-
-1.8V
ID=-
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--6A
VDS=--6V, VGS=--4.5V, ID=--6A
VDS=--6V, VGS=--4.5V, ID=--6A
IS=--6A, VGS=0V
Ratings
min
typ
17
24
35
1420
440
335
14
155
138
128
15
2.0
3.4
--0.78
--1.2
max
23
34
62
Unit
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7006A-002
0.95
3.0
8
5
0.5
0.125
Electrical Connection
8
7
6
5
1
0.95
4
0.25
0.65
0.05 1.0
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Top view
1
2
3
4
Switching Time Test Circuit
VIN
VDD= --6V
0V
--4.5V
0.425
6.4
4.5
VIN
PW=10μs
D.C.≤1%
G
D
ID= --6A
RL=1Ω
VOUT
P.G
50Ω
S
FTD7010
No. A1324-2/4
FTD7010
--8.0V
--6.0V
--2.5V
--4.5
V
--1.8
V
--6
ID -- VDS
--1.5
V
--10
--9
--8
ID -- VGS
Ta= --25
°
C
75
°
C
120
--5
Drain Current, ID -- A
Drain Current, ID -- A
--4
--7
--6
--5
--4
--3
--2
--1
--3
--2
Ta=
75
°
C
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.2
--0.4
--0.6
--0.8
25
°
C
--1
VGS= --1.2V
--1.0
--1.2
--25
°
C
--1.4
--1.6
25
°
C
--1.8
IT14038
140
160
IT14040
--1.0
IT14042
--12
IT14044
VDS= --6V
Drain-to-Source Voltage, VDS -- V
60
RDS(on) -- VGS
IT14037
60
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
50
ID=
--0.5A
40
--1.5A
--3.0A
40
=
VGS
30
--0
I =
.8V, D
--1
.5A
30
20
20
5A
= --1.
.5V, I D
--2
V GS=
.0A
I = --3
--4.5V, D
V GS=
10
10
0
0
--1
--2
--3
--4
--5
--6
--7
--8
0
--60
--40
--20
0
20
40
60
80
100
Gate-to-Source Voltage, VGS -- V
5
|
y
fs
|
-- ID
IT14039
2
--10
7
5
Ambient Temperature, Ta --
°
C
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
3
2
VDS= --6V
25
°
5
°
C
--2
Ta=
C
75
°
VGS=0V
Source Current, IS -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01
2
3
5 7 --0.1
C
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
1000
SW Time -- ID
5 7 --10
IT14041
--0.01
--0.2
Ta
=
--0.3
--0.4
--0.5
25
°
C
--25
°
C
--0.7
75
°
C
--0.6
--0.8
--0.9
5
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD= --6V
VGS= --4.5V
Ciss, Coss, Crss -- pF
f=1MHz
3
2
Switching Time, SW Time -- ns
7
5
3
2
100
7
5
3
2
10
7
--0.01
Ciss
1000
7
5
3
2
td(off)
tf
Coss
Crss
tr
td(on)
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT14043
100
0
--2
--4
--6
--8
--10
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1324-3/4
FTD7010
--4.5
--4.0
--3.5
VGS -- Qg
VDS= --6V
ID= --6A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --30A
10
ID= --6A
DC
op
era
t
PW≤10μs
100
ms
1m
μ
s
s
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
IT14045
10
0m
s
ion
Operation in this area
is limited by RDS(on).
(T
a=
2
5
°
C
)
--0.01
--0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (1000mm
2
×0.8mm)
1unit
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.4
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT14046
Allowable Power Dissipation, PD -- W
1.2
1.1
1.0
0.8
0.6
0.4
0.2
0
0
20
40
When mounted on ceramic substrate
(1000mm
2
×0.8mm)
To
tal
1u
nit
di
ss
ip
ati
o
n
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT14047
Note on usage : Since the FTD7010 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1324-4/4
