Ordering number : EN5319A
N-Channel Silicon MOSFET
FW203
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive N-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm
2129-SOP8
[FW203]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(1000mm
2
×0.8mm)
1unit
Mounted on a ceramic board
(1000mm
2
×0.8mm)
30
±20
5
48
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
D-S Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
y
fs
RDS(on)
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
30
typ
max
100
±10
2.5
8
36
58
550
330
120
46
78
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
1.0
5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0100 No.5319-1/3
FW203
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
VSD
Conditions
See specified Test Circuit.
″
″
″
IS=5A, VGS=0
Ratings
min
typ
15
200
150
160
1.0
max
Unit
ns
ns
ns
ns
V
1.2
Switching Time Test Circuit
Electrical Connection
(Top view)
3
2
10
0
µ
Allowable Power Dissipation, P
D
(FET2) – W
Drain Current, I
D
– A
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
7
I
5
DP
10
7
I
D
5
3
2
ASO
10µs
s
1.8
1.7
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
P
D
(FET 2) – P
D
(FET1)
M
ou
1m
10
10
0m
s
nte
do
na
ce
Mo
u
nte
d
ms
ram
ic
on
bo
ac
ard
1.0
7
Operation in this area
5
is limited by RDS(on).
3
2
Ta=25°C
0.1
1pulse
7
1unit
5
2 3
5 7 1.0
era
mi
cb
s
(1
00
0m
oar
d(
10
00
mm
m
2
×
0
.8m
2
×
0
m)
.8m
m)
2
3
5
2
3
5
7
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, V
DS
– V
2.4
Allowable Power Dissipation, P
D
(FET1) – W
P
D
– T
a
Allowable Power Dissipation, P
D
– W
2.0
1.7
1.6
To
tal
1.2
Pe
ru
di
0.8
nit
dis
s
ss
ip
ati
ipa
tio
n
on
0.4
0
0
Mounted on a ceramic board (1000mm
2
×0.8mm)
20
40
60
80
100
120
140
160
Ambient Temperature, Ta –
°C
No.5319-2/3
FW203
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of October, 1997. Specifications and information herein are subject
to change without notice.
No.5319-3/3
