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FZT1151ATA

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

器件类别:分立半导体    晶体管   

厂商名称:Zetex Semiconductors

厂商官网:http://www.zetex.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Zetex Semiconductors
包装说明
SOT-223, 4 PIN
Reach Compliance Code
not_compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
3 A
集电极-发射极最大电压
40 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G4
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
145 MHz
文档预览
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -40V
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low saturation Voltage
* High Gain
FZT1151A
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-45
-40
-5
-5
-3
-500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
Operating and Storage Temperature
Range
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
FZT1151A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
VALUE
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
MIN.
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
-45
-40
-40
-40
-5
TYP.
-95
-90
-85
-90
-8.5
-0.3
-0.3
-0.3
-60
-120
-140
-170
-200
-985
-850
270
250
180
100
450
400
300
190
45
145
40
170
460
-100
-100
-100
-90
-180
-220
-260
-300
-1100
-1000
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA *
I
C
=-100µA, V
EB
=+1V
I
E
=-100µA
V
CB
=-36V
V
EB
=-4V
V
CE
=-32V
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.8A, I
B
=-70mA*
I
C
=-3A, I
B
=-250mA*
I
C
=-3A, I
B
=-250mA*
I
C
=-3A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Emitter Cut-Off Current I
EBO
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
I
CES
V
CE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
800
Transition Frequency
Output Capacitance
Switching Times
f
T
C
cb
t
on
t
off
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
I
C
=-2A, I
B
=±20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%.
FZT1151A
TYPICAL CHARACTERISTICS
1.0
+25°C
1.0
IC/IB=100
0.8
0.8
V
CE(sat)
- (V)
V
CE(sat)
- (V)
0.6
0.4
0.2
0
1m
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
10m
100m
1
I
C
- Collector Current (A)
10
1m
10m
100m
1
10
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
750
VCE=2V
1.4
IC/IB=100
1.2
h
FE
- Typical Gain
500
V
BE(sat)
- (V)
1.0
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
250
+100°C
+25°C
-55°C
0
1m
100m
10m
1
I
C
- Collector Current (A)
10
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.2
VCE=2V
10
0.9
I
C
- Collector Current (A)
V
BE(on)
- (V)
1
DC
1s
100ms
10ms
1ms
100us
0.6
100m
0.3
-55°C
+25°C
+100°C
0
1m
10m
100m
1
10
10m
100m
1
10
100
I
C
- Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
FZT1151A
THERMAL CHARACTERISTICS
4
Thermal Resistance (°C/W)
50
40
D=1
t1
D=t1
tP
tP
Max Power Dissipation - (Watts)
3
30
20
10
0
100µs
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
2
1
0
0
20
40
60
80
100
120
140
160
1ms
10ms 100ms
1s
10s
100s
Pulse Width
T - Ambient Temperature (°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX FZT1151A Spice model Last revision 12/12/96
*
.MODEL
FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13
+
NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97
+
ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3
+
RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12
+
CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9
*
©
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given
and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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