To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
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(http://www.renesas.com)
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1.
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“Standard”:
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7.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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DATA SHEET
SILICON TRANSISTOR
GA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
•
Compact package
•
Resistors built-in type
•
Complementary to GN4xxx
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
−0
Marking
0.15
+0.1
−0.05
3
1.25
±
0.1
ORDERING INFORMATION
PART NUMBER
GA4xxx
PACKAGE
SC-70
2.1
±
0.1
0 to 0.1
2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
<R>
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
<R>
Total Power Dissipation
Junction Temperature
Storage Temperature
<R>
Note 1.
PART NUMBER
V
EBO
(V)
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
10
10
10
10
5
5
5
5
5
AA1
AB1
AC1
AD1
AE1
AF1
AG1
AH1
AJ1
MARK
R
1
(kΩ)
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
10.0
47.0
47.0
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
PART NUMBER
Note2
0.65
0.65
0.3
0.9
±
0.1
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
Note1
V
V
V
A
A
W
°C
°C
R
1
2
0.3
+0.1
−0
2.0
±
0.2
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
0.1
0.2
0.15
150
–55 to +150
R
2
V
EBO
(V)
15
5
5
5
10
5
5
15
25
1
MARK
R
1
(kΩ)
AK1
AL1
AM1
AN1
AP1
AQ1
AR1
AS1
AT1
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
R
2
(kΩ)
22.0
Note 2.
PW
≤
10 ms, Duty Cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16494EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
GA4xxx
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Collector Cut-off Current
DC Current Gain
Collector Saturation Voltage
Low-level Input Voltage
High-level Input Voltage
Input Resistor
Emitter to Base Resistor
SYMBOL
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
IL
V
IH
R
1
R
2
TEST CONDITIONS
V
CB
= 50 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 5.0 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 5.0 mA, I
B
= 0.25 mA
V
CE
= 5.0 V, I
C
= 100
μ
A
V
CE
= 0.2 V, I
C
= 5.0 mA
Note3
Note2
0.2
Note1
MIN.
TYP.
MAX.
100
UNIT
nA
-
-
V
V
V
kΩ
kΩ
Note 1.
PART NUMBER
MIN.
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
35
60
85
20
35
135
35
85
85
60
135
135
135
8
35
85
20
35
h
FE1
TYP.
MAX.
100
195
340
80
100
600
100
340
340
195
600
600
600
50
100
340
80
100
MIN.
80
90
95
80
80
100
80
95
95
90
100
100
100
50
80
95
80
80
h
FE2
TYP.
UNIT
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note 2.
PART NUMBER
MIN.
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
V
IL
TYP.
MAX.
0.8
0.8
0.8
0.8
0.6
0.5
0.5
0.5
0.6
0.9
0.5
0.5
0.5
0.8
0.5
0.5
0.9
2.0
MIN.
3.0
4.0
5.0
3.0
3.0
1.2
2.0
3.0
3.0
6.0
2.0
3.0
4.0
3.0
2.0
2.0
6.0
8.0
V
IH
TYP.
UNIT
MAX.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2
Data Sheet D16494EJ3V0DS
GA4xxx
Note 3.
PART NUMBER
MIN.
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
7.00
15.40
32.90
3.29
3.29
3.29
0.70
7.00
15.40
32.90
7.00
15.40
32.90
1.54
1.54
1.54
7.00
32.90
R
1
TYP.
10.00
22.00
47.00
4.70
4.70
4.70
1.00
10.00
22.00
47.00
10.00
22.00
47.00
2.20
2.20
2.20
10.00
47.00
MAX.
13.00
28.60
61.10
6.11
6.11
6.11
1.30
13.00
28.60
61.10
13.00
28.60
61.10
2.86
2.86
2.86
13.00
61.10
MIN.
7.00
15.40
32.90
3.29
7.00
7.00
32.90
32.90
15.40
R
2
TYP.
10.00
22.00
47.00
4.70
10.00
10.00
47.00
47.00
22.00
UNIT
MAX.
13.00
28.60
61.10
6.11
13.00
13.00
61.10
61.10
28.60
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
1.54
7.00
32.90
3.29
7.00
2.20
10.00
47.00
4.70
10.00
2.86
13.00
61.10
6.11
13.00
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
250
200
150
100
50
0
0
50
100
150
200
T
A
- Ambient Temperature -
°C
Data Sheet D16494EJ3V0DS
3
微控制器 MCU
