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GBU4A - GBU4M — Bridge Rectifiers
October 2013
GBU4A - GBU4M
Bridge Rectifiers
Features
• Glass-Passivated Junction
• Surge Overload Rating: 150 A Peak
• Reliable Low-Cost Construction Utilizing Molded
Plastic Technique
• Ideal for Printed Circuit Board
• UL Certified: UL #E258596
+ ~
~
-
GBU
Ordering Informations
Part Number
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
Marking
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
Package
GBU 4L
GBU 4L
GBU 4L
GBU 4L
GBU 4L
GBU 4L
GBU 4L
Packing Method
Rail
Rail
Rail
Rail
Rail
Rail
Rail
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated V
R
)
Average Recitified Forward
Current
T
A
= 100°C
T
A
= 40°C
Value
4A
50
35
50
4B
100
70
100
4D
200
140
200
4G
400
280
400
4.0
3.0
150
4J
600
420
600
4K
800
560
800
4M
1000
700
1000
Units
V
V
V
A
A
A
°C
°C
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
-55 to +150
-55 to +150
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
GaN LED被广泛的应用在手机键盘、背光元件、照相机闪光灯、全色户外显示等领域，但是，它们的输出功率还不足以引人注目地渗入固态照明市场。这首先是因为LED相关的不良热处理特性以及不能在高亮度辐射所需要的高注入电流状态下正常工作。 图.采用金属合金衬底技术，SemiLEDs面积仅1mm2的GaN LED能产生0lm/W的全彩输出。由于n-GaN层增强的电流传播模式，光辐射模式非...[详细]
工控电子
