G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
Features :
∗
∗
∗
∗
∗
∗
∗
∗
∗
524
,288 words by 8 bits organization.
Fast access time and cycle time.
Low power dissipation.
Operating Current-150mA max.
TTL Standby Current-2mA max.
Read-Modify-Write,
RAS
-Only Refresh,
Description :
The GLT44108 is a 524,288 x 8 bit high-
performance CMOS dynamic random access
memory. The GLT44108 offers Fast Page mode with
asymmetric address and accepts 512-cycle refresh in
8ms interval.
All inputs are TTL compatible. Fast Page Mode
operation allows random access up to 512 x 8 bits
within a page, with cycle times as short as 22ns.
The GLT44108 is best suited for graphics, digital
signal processing and high performance peripherals.
CAS
-Before-
RAS
Refresh, Hidden
Refresh and Test Mode Capability.
1024 refresh cycles/16ms.
Available in 28pin 400 mil SOJ
Single +5.0V±10% Power Supply.
All inputs and Outputs are TTL-
compatible.
Fast Page Mode supports sustained data
rates up to 50MHZ.
PIN CONFIGURATION :
GLT44108
28 Lead SOJ
V
cc
DQ
0
DQ
1
DQ
2
DQ
3
NC
WE
RAS
A9
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ
7
DQ
6
DQ
5
DQ
4
CAS
OE
NC
A
8
A
7
A
6
A
5
A
4
V
SS
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-1-
G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
HIGH PERFORMANCE
Max. RAS Access Time, (t
RAC
)
Max. Column Address Access Time, (t
AA
)
Min. Fast Page Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
Max. CAS Access Time (t
CAC
)
-40
40 ns
20 ns
22 ns
75 ns
12 ns
-50
50 ns
25 ns
31 ns
90 ns
13 ns
-60
60 ns
30 ns
40 ns
110 ns
15 ns
Pin Descriptions:
Name
A
0
– A
9
RAS
CAS
WE
OE
DQ
0
- DQ
7
V
CC
V
SS
Block Diagram:
OE
WE
CAS
Function
Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Inputs / Outputs
+5V Power Supply
Ground
RAS
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
W E CLOCK
GENERATOR
OE CLOCK
GENERATOR
V
CC
V
SS
Data I/O B U S
COLUMN DECODERS
REFRESH
COUNTER
Y
0
- Y
8
9
1024
A
0
A
1
A
8
A
9
512×8
I/O0
SENSE AMPLIFIERS
I/O
BUFFER
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
.
.
ADDRESS BUFFERS
AND PREDECODERS
X
0
- x
9
ROW
DECODERS
MEMORY
ARRAY
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-2-
G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
Absolute Maximum Ratings*
Operating Temperature, T
A
(ambient)
......................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +150°C
Voltage Relative to V
SS
...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
*Note:Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
=25°C, V
CC
=5V±10%, V
SS
=0V
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS
,
CAS
,
WE
,
OE
Data Input/Output
Max. Unit
5
7
7
pF
pF
pF
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l
l
All voltages are referenced to GND.
After power up, wait more than 200µs and then, execute eight CAS before RAS or RAS only
refresh cycles as dummy cycles to initialize internal circuit.
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-3-
G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
DC and Operating Characteristics (1-2)
TA = 0°C to 70°C, V
CC
=5V±10%, V
SS
=0V, unless otherwise specified.
Sym.
I
LI
Parameter
Input Leakage Current
(any input pin)
Output Leakage Current
(for High-Z State)
Operating Current,
Random READ/WRITE
Standby Current,(TTL)
Refresh Current,
RAS -Only
Test Conditions
0V
≤
V
IN
≤
5.5V
(All other pins not under
test=0V)
0V
≤
V
out
≤
5.5V
Output is disabled (Hiz)
t
RC
= t
RC
(min.)
RAS , CAS , at V
IH
other inputs
≥
V
SS
RAS cycling,
CAS at V
IH
t
RC
= t
RC
(min.)
RAS at V
IL
,
CAS ,address
cycling:t
PC
=t
PC
(min.)
Access
Time
Min.
-10
Typ
Max. Unit Notes
+10
µA
I
LO
I
CC1
-10
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
+10
150
140
120
2
µA
mA
1,2
I
CC2
I
CC3
mA
mA
2
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
150
140
120
150
140
120
150
140
120
1
I
CC4
Operating Current,
FAST Page Mode
mA
1,2
I
CC5
Refresh Current,
CAS Before RAS
RAS , CAS ,
address cycling:
t
RC
=t
RC
(min.)
RAS
≥
V
CC
-0.2V,
CAS
≥
V
CC
-0.2V,
All other inputs
≥V
SS
mA
1
I
CC6
Standby Current, (CMOS)
mA
V
IL
V
IH
V
OL
V
OH
Notes:
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-1
2.4
I
OL
= 4.2mA
I
OH
= -5mA
2.4
+0.8
V
CC
+1
0.4
V
V
V
V
3
3
1.I
CC
is dependent on output loading when the device output is selected. Specified I
CC(max.)
is measured with the output
open.
2.I
CC
is dependent upon the number of address transitions specified. I
CC(max.)
is measured with a maximum of one transition
per address cycle in random Read/Write and Fast Page Mode.
3. Specified V
IL(min.)
is steady state operation. During transitions, V
IL(min.)
may undershoot to -1.0V for a period
not to exceed 20ns.All AC parameters are measured with V
IL(min.)
≥V
ss
and V
IH(max.)
≤V
cc
.
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-4-
G -LINK
AC Characteristics (0
°
C≤T
A
≤
70
°
C,See note 1,2)
≤
Test condition:V
CC
=5.0V±10%, V
IH
/V
IL
=2.4V/0.8V,V
OH
/V
OL
=2.0V/0.8V
Parameter
40 ns
50 ns
Symbol
MIN. MAX. MIN. MAX.
Read/Write Cycle Time
Read Midify Write Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
CAS to Output in Low-Z
Output Buffer Turn-off Delay from CAS
Transition Time(Rise and Fall)
RAS Precharge Time
RAS Pulse Width
RAS Hold Time
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time Referenced
to RAS
Column Address Lead Time Referenced
to RAS
Read Command Setup Time
Read Command Hold Time Referenced
to RAS
Read Command Hold Time Referenced
to CAS
WE Hold Time Referenced to CAS
Write Command Hold Time Referenced
to RAS
t
WCH
t
WCR
6
30
-
-
7
40
-
-
10
45
-
-
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RAL
t
RCS
t
RRH
t
RCH
75
120
-
-
-
0
0
3
25
40
12
40
12
16
11
5
0
6
0
6
30
20
0
0
0
-
-
40
12
20
-
8
50
-
10000
-
-
10000
30
22
-
-
-
-
-
-
-
-
-
-
90
140
-
-
-
0
0
3
30
50
13
50
13
18
13
5
0
8
0
8
40
25
0
0
0
-
-
50
13
25
-
10
50
-
10000
-
-
10000
37
25
-
-
-
-
-
-
-
-
-
-
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
60 ns
MIN. MAX. Unit
110
160
-
-
-
0
0
3
40
60
15
60
15
20
15
5
0
10
0
10
45
30
0
0
0
-
-
60
15
30
-
13
50
-
10000
-
-
10000
45
30
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4
3,4
3,4
3
7
2
4
4
8
9
9
10
5
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-5-
