G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
Features :
∗
∗
∗
∗
∗
∗
∗
∗
∗
32K x 8-bit organization.
Very high speed 12,15,20 ns.
Low standby power.
Fully static operation
5V±10% power supply.
TTL compatible I/O.
Three state output.
Chip enable for simple memory expansion.
Available 300 mil SOJ, 28 pin TSOP and
330 mil SOP Packages.
∗
Industrial Grade Available (-40°C ~ 85°C).
Description :
GLT725608 is high performance 256K bit static
random access memory organized as 32K by 8 bits
and operate at a single 5 volt supply. Fabricated with
G-Link Technology's very advanced CMOS sub-
micron technology, GLT725608 offer a combination
of features: very high speed and very low stand-by
current. In addition, this device also supports easy
memory expansion with an active LOW chip enable
(
CE
) as well as an active LOW output enable (
OE
)
and three state outputs.
Pin Configurations :
SOJ and SOP
Function Block Diagram :
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-1-
G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
Pin Descriptions:
Name
A
0
- A
14
CE
OE
WE
Function
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input and Data Output
+5V Power Supply
Ground
I/O
0
- I/O
7
V
CC
GND
Truth Table:
Mode
Not Selected
(Power Down)
Output Disabled
Read
Write
Absolute Maximum Ratings:
Ambient Temperature
WE
CE
OE
X
H
H
L
H
L
L
L
X
H
L
X
I/O Operation
High Z
High Z
D
OUT
D
IN
V
CC
Current
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
Operation Range :
Range
Commercial
Temperature
0°C to + 70°C
Vcc
5V
±
10%
Under Bias...................................-10°C to
+80°C
Storage Temperature(plastic)....-55°C to
+125°C
Voltage Relative to GND.............-0.5V to +
7.0V
Data Output Current..................................50mA
Power Dissipation......................................1.0W
1.Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Industrial
-40
°C
to 85°C
5V
±
10%
Capacitance
(1)
TA=25°C,f=1.0MHZ :
°
Sym.
C
IN
C
I/O
Parameter
Input
Capacitance
Input / output
Capacitance
conditions
V
IN
= 0V
V
I/O
= 0V
Max. Unit
8
10
pF
pF
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-2-
G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
DC Characteristics
Sym.
V
IL
V
IH
I
LI
I
LO
V
OL
V
OH
I
CC
Parameter
Test Conditions
Min. Typ
(1)
-0.3
2.2
-5
-5
-
2.4
-
-
-
-
-
-
-
-
-
-
-
Max.
+0.8
V
CC
+0.3
5
5
0.4
-
-12 -15 -20
160 150 120
40 30 20
Unit
V
V
µA
µA
V
V
mA
mA
mA
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
V
CC
= Max., V
IN
=0V to V
CC
Output Leakage Current V = Max.,
CE
≥V
CC
IH
Output Low Voltage
V
CC
= Min., I
OL
=8mA
Output High Voltage
V
CC
= Min., I
OH
=-4mA
Operating Power Supply V = Max.,
CE
≤V
,
CC
IL
(3)
Current
I =0mA., F= F
I/O
max
I
CCSB
Standby Power Supply
Current
I
CCSB1
Power Down Power
Supply Current
V
CC
= Max.,
CE
≥V
IH
,
I
I/O
=0mA., F= F
max(3)
V
CC
= Max.,
CE
≥V
CC
.-0.2V,
V
IN
≥V
CC
. -0.2V or
-
10 10 10
1. Typical characteristics are at V
CC
=5V, T
A
=25
2. These are absolute values with reject to device ground and all overshoots due to system or
tester noise are included.
3. F
MAX
=1/t
RC
.
Data Retention
Sym.
V
DR
I
CCDR
t
CDR
t
R
(1)
Parameter
V
CC
for Data retention
Data Retention Current
Test Conditions
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
V
DR
=2.0V
V
DR
=3.0V
CE
≥
V
CC
-0.2V,
Min.
2.0
Typ
(1)
-
-
Max.
5.5
30
50
-
-
Unit
V
µA
µA
ns
ns
Chip Deselect to Data
Retention Time
See Retention Waveform
Operating Recovery Time
0
t
RC(2)
-
-
1.
CE
≥
V
DR
-0.2V, V
IN
≥
V
DR
-0.2V or V
IN
≤
0.2V.
2. t
RC
=Read Cycle Time.
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-3-
G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
Low V
CC
Data Retention Waveform ( CE Controlled)
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Timing Reference Level
0V to 3.0V
3 ns
1.5V
AC Test Loads and Waveforms
Ω
Ω
Ω
Ω
Ω
AC Electrical Characteristics
Read Cycle
JEDEC
Parameter Parameter
Name
Name
Parameter
t
AVAX
t
RC
Read Cycle Time
t
AVQV
t
AA
Address Access Time
t
E1LQV
t
ACS
Chip Select Access Time,
CE
t
GLQV
t
OE
Output Enable to Output Valid
t
E1LQX
t
CLZ
Chip Select to Output Low Z,
CE
t
GLQX
t
OLZ
Output Enable to Output in Low Z
t
E1HQZ
t
GHQZ
t
AXQX
t
CHZ
t
OHZ
t
OH
Chip Deselect to Output in High Z,
CE
Output Disable to Output in High Z
Output Hold from Address Change
725608-12 725608-15 725608-20
Min. Max.
Min. Max.
Min. Max.
Unit
12
-
-
-
3
3
-
-
3
-
12
12
5
-
-
7
6
-
15
-
- 15
- 15
-
3
3
-
-
3
6
-
-
8
6
-
20
-
-
-
3
3
-
-
3
-
20
20
8
-
-
10
8
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-4-
G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
Switching Waveform (Read Cycle)
READ CYCLE 1
(1,2,4)
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1)
Notes:
1.
WE
is High for READ Cycle.
2. Device is continuously selected
CE
≤V
IL
.
3. Address valid prior to or coincident with
CE
transition low and/or transition high.
4.
OE
≤V
IL
.
5. Transition is measured
±200mV
from steady state with C
L
=5pF.
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
-5-
