桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9012(销售型號 S9012)
■
FEATURES
特點
PNP Low Frequency Amplifier Transistor
■
MAXIMUM
RATINGS
最大額定值(T
a
=25
℃
)
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
I
B
P
C
T
j
T
stg
Rating
額定值
-40
-30
-5.0
-500
-50
300
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mAdc
mW
℃
Characteristic
特性參數
Collector-Base voltage
集電極-基極電壓
-Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Base-Current
基極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
■
DEVICE
℃
MARKING
打標
GM9012(
销售型號
S9012)=2T1
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9012(销售型號 S9012)
■
ELECTRICAL CHARACRTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collect-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
Test Condition
測試條件
V
CB
= -35V,I
E
=0
V
EB
= -5V,I
C
=0
I
C
= -100μA
I
C
= -1.0mA
I
E
= -100μA
V
CE
= -1V,
I
C
= -50mA
V
CE
= -6V,
I
C
= -400mA
I
C
= -500mA,
I
B
= -50mA
I
C
=-500mA,
I
B
=-50mA
V
CE
= -1V,
I
C
= -100mA
V
CE
= -6V,
I
C
= -20mA
V
CB
= -6V,I
E
=0,
f=1MHz
Min
最小值
—
—
-40
TYP
典型值
—
Max
最大值
-0.1
-0.1
—
Unit
單½
μA
μA
V
—
—
集電極-基極擊穿電壓
Collect-Base Breakdown Voltage
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
-30
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
-5
70
25
—
—
—
—
400
V
—
—
集電極-發射極½和壓降
Base-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
—
—
-0.6
V
V
BE(sat)
—
—
-1.2
V
V
BE
—
-0.8
-1.0
V
f
T
150
300
—
MHz
C
ob
—
7.0
10
pF
