桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9018(销售型號 S9018)
■
FEATURES
特點
NPN High Frequency Transistor
■
MAXIMUM
RATINGS
最大額定值
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
熱特性
Symbol
符號
P
D
Max
最大值
225
1.8
P
D
300
2.4
R
Θ
JA
T
J
,
T
stg
417
Unit
單½
mW
mW/℃
mW
mW/℃
℃/W
Rating
額定值
20
30
5.0
50
Unit
單½
Vdc
Vdc
Vdc
mAdc
Characteristic
特性參數
Collector-Emitter Voltage
集電極發射極電壓
Collector-Base Voltage
集電極基極電壓
Emitter-Base Voltage
發射極基極電壓
Collector Current-Continuous
集電極電流-連續
■
THERMAL CHARACTERISTICS
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃環境溫度爲 25℃
Derate above25℃
超過
25℃遞減
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)T
A
=
25℃
Derate above25℃超過 25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
-55to+150℃
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9018(销售型號 S9018)
■
DEVICE
MARKING
打標
GM9018(S9018)=J8
■
ELECTRICAL CHARACTERISTICS
電特性
Symbol
符號
I
EBO
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
Min
最小值
—
—
30
20
4
—
—
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Emitter Cutoff Current
發射極截止電流(V
EB
=3.0v,I
C
=0)
Collector Cutoff Current
集電極截止電流(V
CB
=20v,I
E
=0)
Collector-Base Breakdown Voltage
集電極基極擊穿電壓(Ic=100uA)
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓(Ic=1mA)
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓(I
E
=100uA)
Collector Saturation Voltage
集電極½和壓降(Ic=10mAdc,I
B
=1mA)
Base
Saturation Voltage
基極½和壓降(Ic=10mAdc,I
B
=1mA)
DC Current Gain
直流電流增益
(V
CE
=5.0v,I
C
=1.0mA)
Gain Bandwidth Product
增益帶寬乘積(V
CE
=5.0v,I
C
=10mA)
Noise Figure
噪声係數
(V
CE
=6V,Ic=0.1mA,f=1kHz,Rg=10kΩ)
Output Capacitance
輸出電容
(V
CB
=10v,I
E
=0,f=1.0MHz)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
Typ
典型值
—
—
—
—
—
—
—
Max
最大值
0.5
0.5
—
—
—
0.6
1.4
Unit
單½
μ
A
μ
A
V
V
V
V
V
V
BE(sat)
H
FE
f
T
NF
C
ob
40
600
—
—
—
800
—
1.2
200
1100
1.0
1.5
MHz
dB
pF
