GMM3x60-015X2
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Preliminary Data
G1
S1
L1+
G3
S3
L1
G2
S2
G4
S4
L1-
L2+
G5
S5
L2
G6
S6
L2-
L3-
L3
L3+
V
DSS
= 150 V
= 50 A
I
D25
R
DSon typ.
= 19 mΩ
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
D110
I
F25
I
F90
I
F110
Symbol
Conditions
T
VJ
= 25°C to 150°C
continous
transient
T
C
= 25°C
T
C
= 90°C
T
C
= 110°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
T
C
= 110°C (diode)
Conditions
Maximum Ratings
150
±
15
±
20
50
38
33
150
85
65
V
V
V
A
A
A
A
A
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
T
VJ
= 25°C
T
VJ
= 125°C
2.5
T
VJ
= 25°C
T
VJ
= 125°C
0.5
0.2
97
29
30
5800
490
85
120
50
100
25
0.25
0.05
0.02
1.3
1.0
1.6
19
38
24
4.5
5
mΩ
mΩ
V
µA
mA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
R
DSon
1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
1)
on chip level at
V
GS
= 10 V; I
D
= 38 A
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 75 V; I
D
= 38 A
V
GS
= 10 V; V
DS
= 25 V; f = 1 MHz
inductive load
V
GS
= 10 V; V
DS
= 75 V
I
D
= 38 A; R
G(on)
= 39
Ω;
R
G(off)
= 4.7
Ω
T
J
= 125°C
with heat transfer paste (IXYS test setup)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
20160610b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2016 IXYS All rights reserved
1-6
GMM3x60-015X2
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 38 A; V
GS
= 0 V
I
F
= 38 A; -di
F
/dt = 900 A/µs;
R
G(on)
= 39
Ω;
V
R
= 75 V; T
VJ
= 125°C
0.85
65
1.6
40
1.0
V
ns
µC
A
Component
Symbol
I
RMS
Conditions
per pin in main current paths
(L+,L-, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
Maximum Ratings
75
A
T
J
T
stg
V
ISOL
F
C
Symbol
I
ISOL
< 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Conditions
min.
R
pin to chip 1)
L+ to L1/L2/L3 or L- to L1/L2/L3
-55...+175
-55...+125
1000
50 - 250
typ.
0.9
160
25
max.
°C
°C
V~
N
Characteristic Values
mΩ
C
P
Weight
1)
coupling capacity between shorted
pins and back side metallization
pF
g
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
Recommended printed circuit board lay-out
IXYS reserves the right to change limits, test conditions and dimensions.
20160610b
© 2016 IXYS All rights reserved
2-6
GMM3x60-015X2
S1...S6 are only for the use of the gate drive
as they are designed as Kelvin contacts
Leads
SMD
Ordering
Standard
Part Name &
Packing Unit Marking
GMM 3x60-015X2 - SMD
Part Marking
GMM 3x60-015X2
Delivering Mode
Blister
Base Qty.
28
Ordering
Code
510635
20160610b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2016 IXYS All rights reserved
3-6
GMM3x60-015X2
1.2
I
DSS
= 0.25 mA
1.1
120
100
80
1.0
V
DSS
[V]
0.9
I
D
normalized
60
T
J
= 125°C
40
T
J
= 25°C
20
[A]
0.8
-25
0
25
50
75
100
125
150
0
3
4
5
6
7
8
T
J
[°C]
Fig.1 Drain source breakdown voltage
V
DSS
vs. junction temperature T
VJ
V
GS
[V]
Fig. 2 Typ. transfer characteristics
120
100
80
V
G S
=
20 V
15 V
10 V
7V
6.5 V
120
V
GS
=
7V
6.5 V
20 V
15 V
10 V
100
80
TJ = 125°C
6V
I
D
[A]
60
40
T
J
= 25°C
6V
I
D
[A]
60
5.5 V
40
5.5 V
5V
20
0
20
0
5V
0
1
2
V
DS
[V]
3
4
5
0
2
4
6
8
V
DS
[V]
Fig. 4 Typ. output characteristics
Fig. 3 Typ. output characteristics
2.5
V
GS
= 10 V
I
D
= 38 A
2.0
50
4.0
3.5
5V
5.5 V
40
R
DS(on)
3.0
6V
R
DS(on)
1.5
norm.
R
DS(on)
normalized
R
DS(on)
30
R
DS(on)
norm.
2.5
2.0
1.5
1.0
T
J
= 125°C
[mΩ]
20
6.5 V
1.0
0.5
-25
0
25
50
75
100
125
150
10
0.5
7V
10 V
15 V
0
20
40
60
80
100
120
T
J
[°C]
Fig.5 Drain source on-state resistance
R
DS(on)
versus junction temperature T
VJ
IXYS reserves the right to change limits, test conditions and dimensions.
I
D
[A]
Fig. 6 Drain source on-state resistance
R
DS(on)
versus I
D
20160610b
© 2016 IXYS All rights reserved
4-6
GMM3x60-015X2
12
10
8
V
DS
= 75 V
I
D
= 38 A
T
J
= 25°C
60
50
40
V
GS
[V]
I
D
6
30
20
10
0
[A]
4
2
0
0
20
40
60
80
100
120
0
20
40
60
80
100 120 140 160 180
Q
G
[nC]
Fig.7 Typical turn on gate charge
T
C
[°C]
Fig. 8 Drain current I
D
vs. case temperature T
C
0.5
0.4
0.3
V
DS
= 75 V
V
GS
= 0/10 V
R
G
=
39
Ω
T
J
= 125°C
E
on
E
rec(off)
x10
t
d (on)
t
r
0
20
40
60
500
400
0.6
0.5
V
DS
= 75 V
V
GS
= 10/0 V
R
G
=
39
Ω
T
J
= 125°C
t
d(off)
600
500
400
t
300
0.4
E
off
0.3
t
300
E
0.2
[ns]
200
100
0
80
[mJ]
0.2
0.1
0.0
E
off
t
f
0
20
40
60
[ns]
200
100
[mJ]
0.1
0.0
0
80
I
D
[A]
Fig. 9 Typ. turn-on energy and switching times
versus drain current, inductive switching
I
D
[A]
Fig. 10 Typ. turn-off energy and switching times
versus drain-current, inductive switching
0.5
0.4
V
DS
= 75 V
V
GS
= 0/10 V
I
D
=
38 A
T
J
= 125°C
E
on
250
t
d(on)
200
0.8
V
DS
= 75 V
V
GS
= 0/10 V
I
D
=
38 A
T
J
= 125°C
800
t
d(off)
600
E
[mJ]
t
150
0.6
0.3
0.2
0.1
0.0
30
E
off
0.4
t
400
[ns]
t
r
100
50
0
80
E
rec(off)
x10
[mJ]
0.2
E
off
t
f
10
20
30
40
50
60
70
0
80
[ns]
200
40
50
60
70
0.0
0
R
G
[Ω]
Fig. 11 Typ. turn-on energy and switching times
versus gate resistor, induktive switching
IXYS reserves the right to change limits, test conditions and dimensions.
R
G
[Ω]
Fig. 12 Typ. turn-off energy and switching times
versus gate resistor, induktive switching
20160610b
© 2016 IXYS All rights reserved
5-6
Altera SoC
