20V P-Channel Enhancement Mode MOSFET
Product Description
GSM3413, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent R
DS(ON)
, low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone
and notebook computer and other battery powered
circuits, and low in-line power loss are needed in
commercial industrial surface mount applications.
Features
-20V/-3.2A,R
DS(ON)
=100mΩ@V
GS
=-4.5V
-20V/-2.6A,R
DS(ON)
=130mΩ@V
GS
=-2.5V
-20V/-1.5A,R
DS(ON)
=195mΩ@V
GS
=-1.8V
Super high density cell design for extremely
low R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
Net Working System
Packages & Pin Assignments
GSM3413ZF(SOT-23-3L)
1
2
3
Gate
Source
Drain
Ordering Information
GS P/N
GSM3413 P F
Package Code
Halogen Free/
Pb Free Code
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GSM3413
1
Marking Information
Part Number
GSM3413ZF
Package
SOT-23-3L
Part Marking
13YW
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Drain-Source Voltage
Gate –Source Voltage
Parameter
Typical
-20
±12
T
A
=25ºC
T
A
=70ºC
-3.2
-2.6
-10
-1.6
1.25
0.8
150
-55/150
120
T
A
=25ºC
T
A
=70ºC
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
Continuous Drain Current(T
J
=150℃)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
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GSM3413
2
Electrical Characteristics
(T
A
=25
ºC
unless otherwise noted)
Symbol
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Conditions
Static
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=-16V,V
GS
=0V
V
DS
=-16V,
V
GS
=0V,T
J
=85ºC
V
DS
≤-5V,V
GS
=-4.5V
V
DS
≤-5V,V
GS
=-2.5V
V
GS
=-4.5V,I
D
=-3.2A
V
GS
=-2.5V,I
D
=-2.6A
V
GS
=-1.8V,I
D
=-1.5A
V
DS
=-5V,I
D
=-2.8A
I
S
=-1.25A,V
GS
=0V
Dynamic
-20
-0.3
-0.7
±100
-1
-30
-6
-3
94
120
166
6.5
-0.75
415
223
87
5.8
0.85
1.7
13
25
60
70
60
10
-1.3
100
130
195
V
nA
uA
A
I
D(on)
R
DS(on)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
T
r
t
d(off)
T
f
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
mΩ
S
V
V
DS
=-6V,
V
GS
=0V,f=1MHz
V
DS
=-6V,
V
GS
=-4.5V, I
D
≡-2.8A
pF
nC
V
DD
=-6V,
R
L
=6Ω ,I
D
≡-1.0A
V
GEN
=-4.5V,R
G
=6Ω
36
42
34
ns
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GSM3413
3
Typical Performance Characteristics
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GSM3413
4
Typical Performance Characteristics
(continue)
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GSM3413
5
