20V N-Channel Enhancement Mode MOSFET
Product Description
GSM3414, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent R
DS(ON)
, low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone
and notebook computer and other battery powered
circuits, and low in-line power loss are needed in
commercial industrial surface mount applications.
Features
20V/3.6A,R
DS(ON)
=58mΩ@V
GS
=4.5V
20V/3.2A,R
DS(ON)
=68mΩ@V
GS
=2.5V
20V/2.8A,R
DS(ON)
=88mΩ@V
GS
=1.8V
Super high density cell design for extremely
low R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Applications
Portable Equipment
Battery Powered System
Net Working System
Packages & Pin Assignments
GSM3414ZF(SOT-23-3L)
Pin
1
2
3
Description
Gate
Source
Drain
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GSM3414
1
Ordering Information
GS P/N
GSM3414 Z F
Package Code
Halogen Free/
Pb Free Code
Marking Information
Part Number
GSM3414ZF
Package
SOT-23-3L
Part Marking
14YW
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Drain-Source Voltage
Gate –Source Voltage
Parameter
Typical
20
±12
T
A
=25ºC
T
A
=70ºC
3.6
2.6
10
1.6
1.25
0.8
150
-55/150
120
T
A
=25ºC
T
A
=70ºC
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
Continuous Drain Current(T
J
=150℃)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
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GSM3414
2
Electrical Characteristics
(T
A
=25
ºC
unless otherwise noted)
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Conditions
Static
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=0V,V
GS
=±12V
V
DS
=16V,V
GS
=0V
V
DS
=16V,
V
GS
=0V,T
J
=85ºC
V
DS
≥5V,V
GS
=4.5V
V
DS
≥5V,V
GS
=2.5V
V
GS
=4.5V,I
D
=3.6A
V
GS
=2.5V,I
D
=3.2A
V
GS
=1.8V,I
D
=2.8A
V
DS
=5V,I
D
=3.6A
I
S
=1.6A,V
GS
=0V
Dynamic
Min.
20
0.3
Typ
Max.
Unit
0.8
±100
1
10
V
nA
uA
A
I
D(on)
On-State Drain Current
6
4
46
56
72
10
0.85
340
115
33
4.2
0.6
0.4
8
15
15
40
15
5.0
1.2
58
68
88
R
DS(on)
g
FS
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
T
r
t
d(off)
T
f
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
mΩ
S
V
V
DS
=10V,
V
GS
=0V,f=1MHz
V
DS
=10V,
V
GS
=4.5V, I
D
≡3.6A
pF
nC
V
DD
=10V,
R
L
=2.8Ω ,I
D
≡3.6A
V
GEN
=4.5V,R
G
=1Ω
8
25
8
ns
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GSM3414
3
Typical Performance Characteristics
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GSM3414
4
Typical Performance Characteristics
(continue)
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GSM3414
5
