To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
Features
•
Low on-resistance
R
DS(on)
= 40 mΩ typ.
•
Low drive current
•
4.5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D
4
DPAK-S
4
G
1 2
S
1 2
3
3
H7P0601DS
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
H7P0601DL, H7P0601DS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Tch
Tstg
Note2
Rating
–60
±20
–20
–80
–20
–12
12.3
25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Rev.1.00, Aug.05.2003, page 2 of 10
H7P0601DL, H7P0601DS
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Symbol Min
V
(BR)DSS
–60
Typ
—
—
—
—
—
40
60
12
2200
220
130
37
6.5
8
25
85
70
15
0.95
30
Max
—
—
±10
–10
–2.5
50
85
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
I
F
= –20 A, V
GS
= 0
I
F
= –20 A, V
GS
= 0
diF/dt = 100 A/µs
V
GS
= –10 V, I
D
= –10 A
R
L
= 3.0
Ω
Rg = 4.7
Ω
V
DD
= –25 V
V
GS
= –10 V
I
D
= –20 A
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –10 A, V
GS
= –10 V
Note1
I
D
= –5 A, V
GS
= –4.5 V
Note1
I
D
= –10 A, V
DS
= –10 V
Note1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Gate to source breakdown voltage V
(BR)GSS
±20
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
—
–1.0
—
—
7.2
—
—
—
—
—
—
—
—
—
—
—
—
Body-drain diode reverse recovery t
rr
time
Note:
1. Pulse test
Rev.1.00, Aug.05.2003, page 3 of 10
