HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series
Power Switching
REJ03G1133-0200
(Previous: ADE-208-586)
Rev.2.00
Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
•
•
•
•
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
2
3
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
1
2
3
D
G
Tempe-
rature
Sensing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut-
down
Circuit
S
Rev.2.00 Sep 07, 2005 page 1 of 8
HAF1002(L), HAF1002(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
D (pulse)
Note 1
Value
–60
–16
3
–15
–30
–15
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
I
DR
Note 2
Pch
Tch
Tstg
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH (sd) 1
I
IH (sd) 2
Tsd
V
OP
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
—
—
—
—
—
–0.8
–0.35
175
—
Max
—
–1.2
–100
–50
–1
—
—
—
–13
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Channel temperature
Rev.2.00 Sep 07, 2005 page 2 of 8
HAF1002(L), HAF1002(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Symbol
I
D1
I
D2
V
(BR) DSS
V
(BR) GSS
V
(BR) GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Over load shut down operation time
Note4
Min
–7
—
–60
–16
3
—
—
—
—
—
—
—
–1.1
—
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
100
70
10
610
7.5
36
32
29
–1.0
200
3.7
1
Max
—
–10
—
—
—
–100
–50
–1
100
—
—
–250
–2.25
130
90
—
—
—
—
—
—
—
—
—
—
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
mΩ
mΩ
S
pF
µs
µs
µs
µs
V
ns
ms
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –2 V
V
GS
= –1.2 V, V
DS
= –2 V
I
D
= –10 mA, V
GS
= 0
I
G
= –100
µA,
V
DS
= 0
I
G
= 100
µA,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
GS
= –1.2 V, V
DS
= 0
V
GS
= 2.4 V, V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –7.5 A, V
GS
= –4 V
Note 3
I
D
= –7.5 A, V
GS
= –10 V
I
D
= –7.5 A, V
DS
= –10 V
V
DS
= –10 V, V
GS
= 0
f = 1 MHz
I
D
= –7.5 A
V
GS
= –5 V
R
L
= 4
Ω
I
F
= –15 A, V
GS
= 0
I
F
= –15 A, V
GS
= 0
di
F
/dt = 50 A/µs
V
GS
= –5 V, V
DD
= –12 V
V
GS
= –5 V, V
DD
= –24 V
Note 3
Note 3
I
GS (op) 1
I
GS (op) 2
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Coss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
t
os1
t
os2
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.2.00 Sep 07, 2005 page 3 of 8
HAF1002(L), HAF1002(S)
Main Characteristics
Power vs. Temperature Derating
80
–500
–200
Thermal shut down
Operation area
20
µs
10
DC
0
µ
s
Maximum Safe Operation Area
Pch (W)
I
D
(A)
Drain Current
60
–100
–50
–20
–10
–5
–2
–1
Op
1
Channel Dissipation
40
PW
er
at
ion
m
=
s
20
Operation in this area
is limited by R
DS (on)
0
0
50
100
150
200
–0.5 Ta = 25°C
–0.3
–0.3 –0.5 –1 –2
m
s
(T
c=
25
°
C
)
10
–5 –10 –20
–50 –100
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–50
–10 V
–8 V
–6 V
–5 V
–20
Typical Transfer Characteristics
I
D
(A)
I
D
(A)
–40
–16
Tc = –25°C
25°C
75°C
–30
–12
Drain Current
Drain Current
–20
–4 V
–3.5 V
V
GS
= –3 V
Pulse Test
0
–2
–4
–6
–8
–10
–8
–10
–4
V
DS
= –10 V
Pulse Test
0
0
–1
–2
–3
–4
–5
0
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
–2.0
Pulse Test
–1.6
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= –4 V
–10 V
–1.2
I
D
= –10 A
–0.8
–0.4
–5 A
–2 A
0.02
0.01
–0.1 –0.2 –0.5 –1 –2
0
0
–2
–4
–6
–8
–10
–5 –10 –20 –50
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 8
HAF1002(L), HAF1002(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.20
I
D
= –10 A
0.16
V
GS
= –4 V
–10 A
0.08
–10 V
Pulse Test
0
–40
0
40
80
120
160
–2, –5 A
–5 A
–2 A
50
V
DS
= –10 V
Pulse Test
20
10
5
75°C
Tc = –25°C
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
0.12
25°C
2
1
0.04
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20 –50
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
100
50
200
100
50
Switching Characteristics
td(off)
tf
tr
Switching Time t (µs)
20
10
5
2
1
td(on)
20
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
–5 –10 –20 –50
10
–0.1 –0.2 –0.5 –1 –2
0.5
–0.1 –0.2 –0.5 –1 –2
V
GS
= –5 V, V
DD
= –30 V
PW = 300
µs,
duty
≤
1 %
–5 –10 –20 –50
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–20
Typical Capacitance vs.
Drain to Source Voltage
10000
Reverse Drain Current I
DR
(A)
Pulse Test
–16
V
GS
= –5 V
0V
Capacitance Coss (pF)
3000
–12
1000
–8
–4
300
V
GS
= 0
f = 1 MHz
100
0
–10
–20
–30
–40
–50
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V
SD
(V)
Drain to Source Voltage V
DS
(V)
Rev.2.00 Sep 07, 2005 page 5 of 8
