HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-738A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
•
Logic level operation (4 to 6 V Gate drive)
•
High endurance capability against to the short circuit
•
Built–in the over temperature shut–down circuit
•
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
4
4
G
Gate resistor
Tempe–
rature
Sencing
Circuit
1
1
2
3
Latch
Circuit
Gate
Shut–
down
Circuit
2
3
S
1. Gate
2. Drain
3. Source
4. Drain
HAF2011(L), HAF2011(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Ta = 25°C
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
16
–2.5
40
80
40
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Symbol
V
IH
V
IL
Input current
(Gate non shut down)
I
IH1
I
IH2
I
IL
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.8
0.35
175
—
Max
—
1.2
100
50
1
—
—
—
12
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
Test Conditions
2
HAF2011(L), HAF2011(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
I
D1
I
D2
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
Input current (shut down)
I
GS(op)1
I
GS(op)2
Zero gate voltage drain
current
I
DSS
Min
15
—
60
16
–2.5
—
—
—
—
—
—
—
1.0
—
—
8
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
25
15
16
940
10.7
66
15.5
19
1
200
1
Max
—
10
—
—
—
100
50
1
–100
—
—
10
2.25
33
20
—
—
—
—
—
—
—
—
—
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
mΩ
mΩ
S
pF
µs
µs
µs
µs
V
ns
ms
I
F
= 40A, V
GS
= 0
I
F
= 40A, V
GS
= 0
diF/ dt =50A/µs
V
GS
= 5V, V
DD
= 16V
Test Conditions
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
I
G
= 300µA, V
DS
= 0
I
G
= –100µA, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 4V
Note3
I
D
= 20A, V
GS
= 10V
Note3
I
D
= 20A, V
DS
= 10V
Note3
V
DS
= 10V , V
GS
= 0
f = 1 MHz
I
D
= 20A, V
GS
= 5V
R
L
= 1.5Ω
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
Static drain to source on state R
DS(on)
resistance
Forward transfer admittance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Over load shut down
operation time
Note4
Note:
|y
fs
|
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
See characteristic curve of HAF2005.
3
HAF2011(L), HAF2011(S)
Main Characteristics
Power vs. Temperature Derating
80
500
Maximum Safe Operation Area
Pch (W)
Thermal shut down
200 Operation area
Drain Current I
D
(A)
100
50
20
10
5
DC
PW
10
0
µ
1
m s
s
10
µs
60
Channel Dissipation
40
Op
=
er
10
at
m
20
(
2
Operation in this area
Tc =
25
1
is limited by R
DS(on)
°
C
)
0.5 Ta = 25°C
ion
s
0
50
100
150
Tc (°C)
200
0.3
Case Temperature
0.5 1 2
5 10 20
50 100
Drain to Source Voltage V
DS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
γs
(t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
Normalized Transient Thermal Impedance
0.1
0.1
0.05
θ
ch - c(t) =
γ
s (t)
• θ
ch - c
θ
ch - c = 2.5°C/W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
Pulse Width PW (S)
100 m
1
10
4
HAF2011(L), HAF2011(S)
Package Dimensions
As of January, 2001
Unit: mm
(1.4)
4.44
±
0.2
1.3
±
0.15
+ 0.3
– 0.5
10.2
±
0.3
11.3
±
0.5
8.6
±
0.3
10.0
1.27
±
0.2
0.2
0.86
+ 0.1
–
0.76
±
0.1
2.54
±
0.5
11.0
±
0.5
1.2
±
0.2
2.59
±
0.2
2.54
±
0.5
0.4
±
0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
5
模拟电子
