HAT2033R/HAT2033RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-664B (Z)
3rd. Edition
February 1999
Features
•
•
•
•
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
SOP–8
8
5
7 6
5 6 7 8
D D D D
3
1 2
4
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT2033R/HAT2033RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT2033R
HAT2033RJ
Avalanche energy
HAT2033R
HAT2033RJ
Channel dissipation
Channel temperature
Storage temperature
Note:
Pch
Note2
Tch
Tstg
E
AR Note4
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note4
Ratings
60
±
20
7
56
7
—
7
—
4.2
2.5
150
– 55 to + 150
Unit
V
V
A
A
A
—
A
—
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. Value at Tch=25°C, Rg≥50Ω
2
HAT2033R/HAT2033RJ
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage
drain current
Zero gate voltage
drain current
HAT2033R
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
60
±
20
—
—
—
—
—
1.2
—
—
6.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.03
0.04
10
740
370
130
13
55
140
95
0.82
45
Max
—
—
±
10
1
0.1
—
10
2.2
0.038
0.053
—
—
—
—
—
—
—
—
1.07
—
Unit
V
V
µA
µA
µA
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
IF = 7 A, V
GS
= 0
Note4
IF = 7 A , V
GS
= 0
diF/ dt = 50 A/µs
V
DS
=4 8V , V
GS
= 0
Ta = 125°C
V
DS
= 10 V, I
D
= 1 mA
I
D
= 4 A, V
GS
= 10 V
Note4
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
=10 V, I
D
= 4 A
V
DD
≅
30 V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
µA,
V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
HAT2033RJ I
DSS
HAT2033R
I
DSS
HAT2033RJ I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
3
HAT2033R/HAT2033RJ
Main Characteristics
Maximum Safe Operation Area
100
I
D
(A)
4.0
Pch (W)
Power vs. Temperature Derating
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
10 µs
100 µs
1m
10
ms
30
10
3
1
0.3
DC
Op
PW
=
3.0
s
sh
o
Drain Current
Channel Dissipation
er
a
2.0
1.0
0
50
100
150
Ta (°C)
200
Ambient Temperature
N
Operation in
<
ote
10
6
this area is
s)
0.1 limited by R
DS(on)
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V
DS
(V)
tio
n(
(1
PW
t)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10 V
I
D
(A)
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
16
6V
Pulse Test
4.5 V
(A)
40
30
4.0 V
I
D
Drain Current
12
Drain Current
20
3.5 V
3.0 V
V
GS
= 2.5 V
8
25°C
4
Tc = 75°C
–25°C
10
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
4
V
GS
(V)
5
Gate to Source Voltage
4
HAT2033R/HAT2033RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
0.5
0.5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Pulse Test
0.2
0.4
0.3
0.1
V
GS
= 4 V
0.05
0.2
I
D
=5A
2A
1A
0.1
0.02
0.01
10 V
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
0.1 0.2
0.5 1 2
5 10 20
Drain Current I
D
(A)
50
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1, 2 A
0.06
V
GS
= 4 V
0.04
1, 2, 5 A
10 V
5A
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I
D
(A)
100
75 °C
Tc = –25 °C
25 °C
0.02
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
5
