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HAT2105R-EL-E

Silicon N Channel Power MOS FET High Speed Power Switching

器件类别:分立半导体    晶体管   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Renesas
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
SOP
包装说明
SMALL OUTLINE, R-PDSO-G8
针数
8
制造商包装代码
PRSP0008DD-D8
Reach Compliance Code
compli
ECCN代码
EAR99
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压
200 V
最大漏极电流 (Abs) (ID)
0.5 A
最大漏极电流 (ID)
0.5 A
最大漏源导通电阻
5.5 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G8
元件数量
2
端子数量
8
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
2 W
最大脉冲漏极电流 (IDM)
2 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
HAT2105R
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1369-0100
Rev.1.00
Apr 04, 2006
Features
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
7 8
D D
5
7 6
4
S1
MOS1
S3
MOS2
5 6
D D
8
2
G
3
1 2
4
G
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Pch
Note3
Ratings
200
±15
0.5
2
0.5
1.3
2
Unit
V
V
A
A
A
W
W
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
10
µs,
duty cycle
1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
°
C
°
C
Rev.1.00 Apr 04, 2006 page 1 of 3
HAT2105R
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
Min
200
±15
1.0
0.56
Typ
1.6
1.9
2.4
0.86
120
29
10
10
14
24
9
0.9
Max
±10
5
2.1
2.2
2.7
5.5
1.4
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±12
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.5 A, V
GS
= 10 V
Note4
I
D
= 0.5 A, V
GS
= 4 V
Note4
I
D
= 2 A, V
GS
= 5 V
Note4
I
D
= 0.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
V
GS
= 5 V, I
D
= 0.5 A,
V
DD
30 V
I
F
= 0.5 A, V
GS
= 0
Note4
Rev.1.00 Apr 04, 2006 page 2 of 3
HAT2105R
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95
×
4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
*
1
D
F
8
5
*
2
E
H
E
b
p
Index mark
1
Z
e
4
*
3
b
p
x M
c
Terminal cross section
(Ni/Pd/Au plating)
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference
Dimension in Millimeters
Symbol
Min
L
1
L
D
E
A
2
A
1
A
b
p
b
1
c
c
1
H
E
e
x
y
Z
L
L
1
Nom Max
4.90 5.3
3.95
A
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
A
1
y
Detail F
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Part Name
HAT2105R-EL-E
Quantity
2500 pcs
Taping
Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Apr 04, 2006 page 3 of 3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co.,
Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co.,
Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
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参数对比
与HAT2105R-EL-E相近的元器件有:HAT2105R。描述及对比如下:
型号 HAT2105R-EL-E HAT2105R
描述 Silicon N Channel Power MOS FET High Speed Power Switching Silicon N Channel Power MOS FET High Speed Power Switching
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