HAT2204C
Silicon N Channel MOS FET
Power Switching
REJ03G0448-0500
Rev.5.00
May 10, 2007
Features
•
Low on-resistance
R
DS(on)
= 26m
Ω
typ.(at V
GS
= 4.5 V)
•
Low drive current
•
High density mounting
•
1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index band
4
5
6
2
3
2 3 4 5
DDD D
6
G
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
S
1
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Pch
Note2
Tch
Tstg
Note1
Ratings
12
±8
3.5
14
3.5
900
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 1 of 7
HAT2204C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Notes: 3. Pulse test
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
12
±8
—
—
0.3
—
—
—
8.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
26
34
45
13
770
115
50
10
9.5
36
5
9
1.5
2
0.8
Max
—
±10
1
1.2
34
44
69
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
µA
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±10 µA,
V
DS
= 0
V
GS
=
±6.4
V, V
DS
= 0
V
DS
= 12 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.8 A, V
GS
= 4.5 V
Note3
I
D
= 1.8 A, V
GS
= 2.5 V
Note3
I
D
= 1.8 A, V
GS
= 1.8 V
Note3
I
D
= 1.8 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1.8 A, V
GS
= 4.5 V
V
DS
= 10 V, R
L
= 5.6
Ω,
Rg = 4.7
Ω
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 3.5 A
I
F
= 3.5 A, V
GS
= 0
Note3
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 2 of 7
HAT2204C
Main Characteristics
Power vs.Temperature Dreating
1.6
100
Test condition
When using the glass epoxy
board.(FR4 40 x 40 x 1.6 mm)
Maximum Safe Operation Area
Ta = 25°C,1 shot pulse
Pch (W)
30
100
µs
When using the FR4 board.
I
D
(A)
10
µs
PW
C
D
1.2
10
1
=
10
Power Dissipation
Drain Current
3
1
0.3
0.1
0.03
m
s
s
0.8
m
0.4
Operation in this
area is limited by
r
pe
O
at
io
n
R
DS(on)
0
50
100
150
Ta (°C)
200
0.01 0.03 0.1 0.3
1
3
10 30 100
V
DS
(V)
Ambient Temperature
Drain to Source Voltage
20
Typical Output Characteristics
Pulse Test
4.5 V
2.5 V
1.8 V
Typical Transfer Characteristics
20
25°C
I
D
(A)
I
D
(A)
16
16
−25°C
12
Tc = 75
°C
12
1.6 V
8
1.4 V
Drain Vurrent
Drain Current
8
4
V
GS
= 1.2 V
4
V
DS
= 10 V
Pulse Test
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
0
2
4
6
Drain to Source Voltage
8
10
V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
1000
Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Pulse Test
120
I
D
= 3.5 A
80
1.8 A
40
1A
10
0.1
100
V
GS
= 1.8 V
2.5 V
4.5 V
0
2
4
6
8
V
GS
(V)
10
1
Drain Current
10
I
D
(A)
100
Gate to Source Voltage
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 3 of 7
HAT2204C
Static Drain to Source On State Resistance
vs. Temperature
100
Forward Transfer Admittance vs.
Drain Current
Tc =
−25°C
25°C
10
75°C
3
1
0.3
0.1
0.1
V
DS
= 10 V
Pulse Test
Forward Transfer Admittance |yfs| (S)
100
30
80
I
D
= 3.5 A
60
V
GS
= 1.8 V
1A
40
2.5 V
1, 1.8 A
20
0
−25
4.5 V
1, 1.8, 3.5 A
Pulse Test
0
25
50
75
100 125 150
Tc (°C)
Case Temperature
3.5 A
1.8 A
0.3
1
3
10
30
100
Drain Current
I
D
(A)
Dynamic Input Characteristics
40
V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
8
V
GS
(V)
10000
3000
I
D
= 3.5 A
30
V
DD
= 12 V
10 V
5V
20
V
DD
= 12 V
10 V
5V
V
DD
0
4
8
12
16
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
0
20
6
V
GS
= 0
f = 1 MHz
Ciss
V
GS
Drain to Source Voltage
Gate to Source Voltage
Capacitance C (pF)
1000
300
100
30
10
3
1
Coss
4
Crss
10
2
0
2
4
6
8
10
V
DS
(V)
12
Drain to Source Voltage
20
I
DR
(A)
1000
Switching Characteristics
Switching Time t (ns)
16
12
5V
tr
100
td(off)
Reverse Drain Current
V
GS
= 0 , -5 V
8
10
td(on)
tf
4
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
1
0.1
0.3
1
3
10
30
100
Drain Current
I
D
(A)
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 4 of 7
HAT2204C
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
4.7
Ω
Vin
4.5 V
V
DS
= 10 V
Vin
Vout
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
10%
Vout
Monitor
Switching Time Waveform
90%
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 5 of 7
