HCP60R750V
November 2014
BV
DSS
= 600 V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 14 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
100% Avalanche Tested
GS
=10V
R
DS(on) typ
= 0.67
I
D
= 7 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
600
Units
V
A
A
A
V
mJ
A
mJ
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
7
4.9
21
30
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25 )
- Derate above 25
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
90
4
0.5
83
0.66
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.5
60.5
Units
/W
HCP60R750V
Electrical Characteristics
T
C
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 4.4 A
V
DS
= 10, I
D
= 4.4 A
2.5
--
--
--
0.67
5
3.5
0.75
--
S
V
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125
V
GS
=
20 V, V
DS
= 0 V
600
--
--
--
--
--
--
--
--
10
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
710
200
3.5
0.5
920
260
4.6
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 7 A
V
GS
= 10 V
V
DS
= 300 V, I
D
= 7 A,
R
G
= 25
--
--
--
--
--
--
--
20
25
60
25
14
4
5
50
60
130
60
18.5
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7 A, V
GS
= 0 V
I
S
= 7 A, V
GS
= 0 V
di
F
/dt = 100 A/
--
--
--
--
--
--
--
--
300
2.4
7
A
21
1.2
--
--
V
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
=4A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
HCP60R750V
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HCP60R750V
Typical Characteristics
(continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Note :
1. V
GS
= 10 V
2. I
D
= 4.4 A
0.9
Note :
1. V
GS
= 0 V
2. I
D
= 250 A
0.5
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
7
Operation in This Area
is Limited by R
DS(on)
Figure 8. On-Resistance Variation
vs Temperature
10 s
100 s
1 ms
10 ms
100 ms
DC
6
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
5
4
3
2
1
0
25
10
0
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
10
-2 -1
10
10
0
10
1
10
2
10
3
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
Z
JC
(t), Thermal Response
D=0.5
0.2
0.1
10
-1
* Notes :
1. Z
JC
(t) = 1.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
0.05
0.02
0.01
single pulse
P
DM
t
1
-3
10
-2 -5
10
t
2
10
1
10
-4
10
10
-2
10
-1
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HCP60R750V
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
