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April 1
st
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DATA SHEET
COMPOUND TRANSISTOR
HD2 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• The zener diode connected between the collector and base of the transistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HD2 SERIES LISTS
Products
HD2A3M
HD2F3P
HD2L3N
HD2A4M
HD2L2Q
HD2F2Q
HD2A4A
Marking
LA
LB
LC
LD
LE
LF
LY
R
1
(kΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R
2
(kΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
Note1
Ratings
60±10
60±10
10
1.0
2.0
20
2.0
150
−55
to +150
Unit
V
V
V
A
A
mA
W
°C
°C
I
B(DC)
Note2
T
j
T
stg
Notes 1.
PW
≤
10 ms, duty cycle
≤
50 %
2.
When 0.7 mm
×
16 cm
2
ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18007EJ4V0DS00 (4th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
HD2 SERIES
HD2A3M
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
80
200
200
0.35
0.3
0.7
0.7
1.0
1.0
1.3
1.3
V
V
kΩ
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
HD2F3P
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 0.3 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
200
300
200
0.12
0.3
0.3
1.54
7
2.2
10
2.86
13
V
V
kΩ
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
HD2L3N
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
200
300
200
0.2
0.3
3.29
7
4.7
10
6.11
13
V
V
kΩ
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
2
Data Sheet D18007EJ4V0DS
HD2 SERIES
HD2A4M
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 0.1 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
200
300
200
0.2
0.3
7
7
10
10
13
13
V
V
kΩ
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
HD2L2Q
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 1.0 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
200
300
200
0.5
0.3
329
3.29
470
4.7
611
6.11
V
V
Ω
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
HD2F2Q
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
h
FE2
h
FE3
V
OL
V
IL
Note
Note
Note
Note
Note
Conditions
V
CB
= 40 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
IN
= 5.0 V, I
C
= 1.0 A
V
CE
= 5.0 V, I
C
= 100
μ
A
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
100
300
200
0.5
0.3
154
1.54
220
2.2
286
2.86
V
V
Ω
kΩ
R
1
R
2
Note
PW
≤
350
μ
s, duty cycle
≤
2 %
Data Sheet D18007EJ4V0DS
3
