UNISONIC TECHNOLOGIES CO., LTD
HE8051
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC
HE8051
is a low voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
1
NPN SILICON TRANSISTOR
FEATURES
* Collector current up to 1.5A
* Collector-Emitter voltage up to 25 V
* complimentary to UTC
HE8551
TO-92
ORDERING INFORMATION
Order Number
Lead Free
HE8051L-x-T92-B
HE8051L-x-T92-K
Halogen Free
HE8051G-x-T92-B
HE8051G-x-T92-K
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
www.unisonic.com.tw
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HE8051
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Dissipation (T
A
=25°C)
P
C
1
W
Collector Current
I
C
1.5
A
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE
f
T
C
ob
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
25
6
TYP
MAX
UNIT
V
V
V
nA
nA
100
100
45
85
40
135
160
110
500
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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HE8051
Current Gain-Bandwidth Product,
f
T
(MHz)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage, V
BE
& V
CE
(mV)
DC Current Gain, h
FE
www.unisonic.com.tw
Capacitance, C
ob
(pF)
NPN SILICON TRANSISTOR
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HE8051
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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