PD -2.362 rev. C 01/2000
HFA12PA120C
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low I
RRM
• Very Low Q
rr
• Guaranteed Avalanche
• Specified at Operating Conditions
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6A
Q
rr
(typ.)= 116nC
I
RRM
(typ.) = 4.4A
t
rr
(typ.) = 26ns
di
(rec)M
/dt (typ.)* = 100A/µs
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA12PA120C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
results in performance which is unsurpassed by any rectifier previously available. The
HFA12PA120C has basic ratings of 1200 volts and 6 amps per leg continuous current.
In addition to ultra fast recovery time, the HEXFRED product line features extremely
low values of peak recovery current (I
RRM
) and does not exhibit any tendency to "snap-
off" during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower switching losses in both
the diode and the switching transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA12PA120C is ideally suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS systems, and power factor
correction circuits), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
6.0
80
24
62.5
25
-55 to +150
TO-247AC
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Units
V
A
W
°C
*
125°C
1
HFA12PA120C
PD-2.362 rev. C 01/2000
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
Cathode Anode Breakdown
Voltage
V
FM
Max. Forward Voltage
–––
–––
–––
I
RM
Max. Reverse Leakage Current
–––
–––
C
T
L
S
Junction Capacitance
Series Inductance
–––
–––
2.7
3.5
2.4
3.0
3.9
2.8
µA
110
9.0
8.0
500
14
–––
pF
nH
V
I
F
= 6.0A
I
F
= 12A
I
F
= 6.0A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
D
R
V
R
= 200V
Rated
Min. Typ. Max. Units
1200 ––– –––
V
Test Conditions
I
R
= 100µA
0.26 5.0
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Peak Rate of Recovery
Current During t
b
Reverse Recovery Charge
Peak Recovery Current
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
53
87
4.4
5.0
116
233
180
100
–––
80
130
8.0
9.0
320
nC
585
–––
–––
A/µs
A
ns
Test Conditions
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
di
f
/dt = 200A/µs
V
R
= 200V
I
F
= 6.0A
Thermal - Mechanical Characteristics
Parameter
T
lead
R
thJC
R
thJA
R
Q
Min.
––––
––––
––––
––––
––––
––––
Typ.
––––
––––
––––
0.5
2.0
0.07
––––
––––
Max.
300
2.0
80
––––
––––
––––
12
10
Units
°C
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
K/W
R
thCS
S
Wt
g
(oz)
Kg-cm
lbf•in
Mounting Torque
6.0
5.0
Q
0.063 in. from Case (1.6mm) for 10 sec
R
Typical Socket Mount
S
Mounting Surface, Flat, Smooth and Greased
2
HFA12PA120C
PD-2.362 rev. C 01/2000
100
1000
TJ = 150˚C
Reverse Current - I
R
(µA)
100
125˚C
100˚C
10
1
25˚C
10
Instantaneous Forward Current - I
F
(A)
0.1
0.01
0
200 400 600 800 1000 1200 1400
Reverse Voltage - V
R
(V)
100
1
Junction Capacitance - C
T
(pF)
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
T = 25˚C
J
10
0.1
0
2
4
Forward Voltage Drop - V
FM
(V)
6
1
1
10
100
1000
10000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = 1 / t
t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA12PA120C
PD-2.362 rev. C 01/2000
110
100
90
80
trr - ( nC )
I
F
= 6 A
I
F
= 4 A
25
20
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
I
F
= 6 A
I
F
= 4 A
15
Irr - ( A)
70
60
50
40
30
20
100
di
f
/dt - (A/µs )
Fig. 5 - Typical Reverse Recovery
Vs. di
f
/dt
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10
5
1000
0
100
di
f
/dt - (A/µs )
1000
Fig. 6 - Typical Recovery Current
Vs. di
f
/dt
1000
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10000
800
I
F
= 6 A
I
F
= 4 A
Qrr - ( nC )
600
400
di
(REC)
M/dt - (A/µs )
1000
I
F
= 6 A
I
F
= 4 A
100
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
200
0
100
di
f
/dt - (A/µs )
1000
10
100
1000
Fig. 8 - Typical Stored Charge vs. di
f
/dt
di
f
/dt - (A/µs )
Fig. 7 - Typical di
(REC)
M/dt vs. di
f
/dt
4
HFA12PA120C
PD-2.362 rev. C 01/2000
R E V E R S E R E C O V E R Y C IR C U IT
V
R
= 200V
0 .0 1
Ω
L = 70µ H
D .U .T .
d if/d t
A D JU S T
D
G
IR F P 2 5 0
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RR M
0 .5 I
R R M
d i(re c )M /d t
0 .7 5 I
R R M
5
1
d i
f
/d t
1. di
f
/dt - Rate of change of
current
through zero
crossing
2. I
RRM
- Peak reverse
recovery current
4. Q
rr
- Area under curve
defined by t
rr
and I
RRM
t
rr
X I
RRM
3. trr - Reverse recovery
Q
rr
=
time measured
from zero
2
crossing point of negative
going I
F
to point where a line 5. di
(rec)M
/dt - Peak rate of
passing through 0.75 I
RRM
change of current during t
b
and 0.50 I
RRM
portion of t
rr
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
5
