S E M I C O N D U C T O R
HGTG20N60C3R, HGTP20N60C3R,
HGT1S20N60C3R, HGT1S20N60C3RS
40A, 600V, Rugged UFS Series N-Channel IGBTs
Description
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same T
J
as the
IGBT under test.
Formerly Developmental Type TA49047.
January 1997
Features
• 40A, 600V T
J
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . 330ns
• Short Circuit Rating at T
J
= 150
o
C . . . . . . . . . . . . . 10µs
• Low Conduction Loss
Ordering Information
PART NUMBER
HGTP20N60C3R
HGTG20N60C3R
HGT1S20N60C3R
HGT1S20N60C3RS
PACKAGE
TO-220AB
TO-247
TO-262AA
TO-263AB
BRAND
20N60C3R
20N60C3R
20N60C3R
20N60C3R
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
G
E
Packaging
JEDEC STYLE TO-247
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-263AB
M
A
JEDEC TO-262AA
E
C
G
COLLECTOR
(FLANGE)
A
G
E
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
4226.1
5-3
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
600
40
20
80
±20
±30
80A at 600V
164
1.32
100
-40 to 150
260
10
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
µs
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 440V, T
J
= 150
o
C, R
GE
= 10Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250µA,
V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C
R
G
= 10Ω
V
GE
= 15V
I
C
= I
C110
,
V
CE
= 0.5 BV
ES
V
CE(PK)
= 600V
L = 1mH
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
MIN
600
15
-
-
-
-
3.5
-
80
TYP
-
-
-
-
1.8
2.1
6.3
-
-
MAX
-
-
250
3.0
2.2
2.5
7.5
±100
-
UNITS
V
V
µA
mA
V
V
V
nA
A
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA (See Figure 12)
Gate-Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
dV
CE
/dt
dV
CE
/dt
E
ON
E
OFF
R
θJC
I
C
= I
C110
, V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
9.0
87
116
34
40
390
330
1.3
7.0
2.3
3.0
-
-
110
150
-
-
500
400
-
-
-
-
0.76
V
nC
nC
ns
ns
ns
ns
V/ns
V/ns
mJ
mJ
o
C/W
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 1mH
Diode used in test circuit
RURP1560 at 150
o
C
-
-
-
-
NOTES:
3. dV
CE
/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (E
ON
) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the point where the collector voltage equals V
CE(ON)
. This value of E
ON
was obtained with a
RURP1560 diode at T
J
= 150
o
C. A different diode or temperature will result in a different E
ON
. For example with diode at T
J
= 25
o
C E
ON
is about one half the value at 150
o
C.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5-4
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves
I
CE
, COLLECTOR EMITTER CURRENT (A)
I
CE
, COLLECTOR EMITTER CURRENT (A)
80
70
60
50
T
C
= -40
o
C
40
30
20
10
0
6
7
8
9
10
11
12
13
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
T
C
= 150
o
C
T
C
= 25
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
40
35
30
25
20
15
10
5
0
0
1
2
3
9.0V
8.5V
8.0V
7.5V
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
12.0V
10.0V
V
GE
= 15.0V
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250µs
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR EMITTER CURRENT (A)
I
CE
, DC COLLECTOR CURRENT (A)
PULSE DURATION = 250µs
80 DUTY CYCLE <0.5%
V
GE
= 15V
70
T
C
= -40
o
C
60
50
40
30
20
10
0
0
1
8
2
4
6
3
5
7
9
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
T
C
= 150
o
C
T
C
= 25
o
C
90
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
V
GE
= 15V
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
38
t
D(ON)I
, TURN ON DELAY TIME (ns)
36
34
32
30
28
26
5
t
D(OFF)I
, TURN OFF DELAY TIME (ns)
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 15V
425
400
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
375
350
325
300
275
10
20
30
15
25
35
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
5
20
25
30
35
10
15
I
CE
, COLLECTOR EMITTER CURRENT (A)
40
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
5-5
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves
120
t
RI
, TURN ON RISE TIME (ns)
100
(Continued)
450
425
t
FI
, FALL TIME (ns)
400
375
350
325
300
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH, V
CE(PK)
= 480V,
V
GE
= 15V
80
60
40
20
0
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
275
250
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR EMITTER CURRENT (A)
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
6.0
E
ON
, TURN ON ENERGY LOSS (mJ)
5.0
4.0
3.0
2.0
E
OFF
, TURN OFF ENERGY LOSS (mJ)
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
6.5
5.5
4.5
3.5
2.5
1.5
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
1.0
0
5
15
20
30
10
25
35
I
CE
, COLLECTOR EMITTER CURRENT (A)
40
0.5
5
10
15
20
25
30
35
I
CE
, COLLECTOR EMITTER CURRENT (A)
40
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
I
CE
, COLLECTOR EMITTER CURRENT (A)
100
f
MAX
, OPERATING FREQUENCY (kHz)
T
J
= 150
o
C, R
G
= 10Ω, L = 1mH, V
CE(PK)
= 480V
T
C
= 75
o
C, V
GE
= 15V
100
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 1mH
80
PARTS MAY CURRENT LIMIT IN THIS REGION.
60
30
20
10
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
1
5
10
20
30
I
CE
, COLLECTOR EMITTER CURRENT (A)
40
40
20
0
0
100
200
300
400
500
600
700
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 12. SWITCHING SAFE OPERATING AREA
5-6
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves
4500
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
4000
C
IES
3500
C, CAPACITANCE (pF)
3000
2500
2000
1500
1000
500
0
0
5
10
C
OES
C
RES
15
20
25
600
(Continued)
I
G
REF = 1.376mA, R
L
= 30Ω, T
C
= 25
o
C
V
CE
= 600V
480
12
15
V
GE
, GATE-EMITTER VOLTAGE (V)
10
1
360
V
CE
= 200V
240
V
CE
= 400V
9
6
120
3
0
0
0
10
20
30
40
50
60
70
80
90
Q
G
, GATE CHARGE (nC)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
Z
θ
JC
, NORMALIZED THERMAL
RESPONSE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
D
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-4
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
10
0
t
1
10
-2
10
-3
10
-5
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH
RURP1560
V
GE
E
OFF
R
G
= 10Ω
+
-
V
DD
= 480V
I
CE
10%
t
D(OFF)I
t
FI
t
RI
t
D(ON)I
V
CE
90%
90%
10%
E
ON
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
5-7
