HGTG30N60B3
Data Sheet
November 2004
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Features
• 60A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
HGTG30N60B3
PACKAGE
TO-247
BRAND
G30N60B3
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
HGTG30N60B3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60B3
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
60
30
220
±20
±30
60A at 600V
208
1.67
100
-55 to 150
260
4
10
W
W/
o
C
mJ
o
C
o
C
UNITS
V
A
A
A
V
V
600
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 3Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= -10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
20
-
-
-
-
4.2
-
V
CE (PK)
= 480V
V
CE (PK)
= 600V
200
60
TYP
-
-
-
-
1.45
1.7
5.0
-
-
-
MAX
-
-
250
3.0
1.9
2.1
6.0
±250
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C,
R
G
= 3Ω,
V
GE
= 15V,
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
-
7.2
170
230
36
25
137
58
500
550
680
-
190
250
-
-
-
-
-
800
900
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 1mH
Test Circuit (Figure 17)
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
HGTG30N60B3
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 17.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 1mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
-
TYP
32
24
275
90
500
1300
1600
-
MAX
-
-
320
150
-
1550
1900
0.6
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
60
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
225
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
V
GE
= 15V
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L =100µH
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
f
MAX
, OPERATING FREQUENCY (kHz)
T
J
= 150
o
C, R
G
= 3Ω, L = 1mH,
V
CE
= 480V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
100
V
CE
= 360V, R
G
= 3Ω, T
J
= 125
o
C
18
16
I
SC
14
12
10
8
6
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
450
400
350
300
250
200
150
10
1
T
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
o
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
) 75 C
o
P
C
= CONDUCTION DISSIPATION 75
o
C
110 C
(DUTY FACTOR = 50%)
110
o
C
R
ØJC
= 0.6
o
C/W, SEE NOTES
5
10
20
V
GE
15V
10V
15V
10V
40
60
t
SC
0.1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
20
500
HGTG30N60B3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
225
DUTY CYCLE <0.5%, V
GE
= 10V
200 PULSE DURATION = 250µs
175
150
125
100
75
50
25
0
0
2
4
6
8
10
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
350
300
250
200
150
100
50
0
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6
E
ON2
, TURN-ON ENERGY LOSS (mJ)
5
4
3
2
1
0
10
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
R
G
= 3Ω L = 1mH, V
CE
= 480V
,
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
4.5
R
G
= 3Ω L = 1mH, V
CE
= 480V
,
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
20
30
T
J
= 25
o
C, V
GE
= 10V OR 15V
40
50
60
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
55
t
dI
, TURN-ON DELAY TIME (ns)
50
R
G
= 3Ω, L = 1mH, V
CE
= 480V
250
R
G
= 3Ω, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
200
t
rI
, RISE TIME (ns)
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
150
45
40
35
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
25
10
20
30
40
50
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
100
50
0
10
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
HGTG30N60B3
Typical Performance Curves
300
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
Unless Otherwise Specified
(Continued)
R
G
= 3Ω, L = 1mH,
V
CE
= 480V
120
R
G
= 3Ω, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
200
t
fI
, FALL TIME (ns)
250
100
80
150
60
T
J
= 25
o
C, V
GE
= 10V AND 15V
100
10
20
30
40
50
60
40
10
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
250
200
150
100
50
0
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
C
= -55
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
300
16
14
12
I
g (REF)
= 1mA, R
L
= 10Ω, T
C
= 25
o
C
V
CE
= 600V
10
8
6
V
CE
= 200V
4
V
CE
= 400V
2
0
0
50
100
Q
G
, GATE CHARGE (nC)
150
200
T
C
= 25
o
C
T
C
= 150
o
C
4
5
6
7
8
9
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
10
FREQUENCY = 1MHz
8
C, CAPACITANCE (nF)
C
IES
6
4
C
OES
2
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
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