HGTG5N120CND, HGTP5N120CND,
HGT1S5N120CNDS
Data Sheet
January 2000
File Number
4598.2
25A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG5N120CND, HGTP5N120CND and
HGT1S5N120CNDS are
Non-Punch Through
(NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is developmental type TA49309. The diode used in
anti-parallel is developmental type TA49058.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49307.
Features
• 25A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
Thermal Impedance
SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB ALTERNATE VERSION
E
C
Ordering Information
PART NUMBER
HGTG5N120CND
HGTP5N120CND
HGT1S5N120CNDS
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
5N120CND
5N120CND
5N120CND
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNDS9A.
G
COLLECTOR
(FLANGE)
E
Symbol
C
JEDEC STYLE TO-247
E
C
G
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG5N120CND
HGTP5N120CND
HGT1S5N120CNDS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
1200
25
12
40
±20
±30
30A at 1200V
167
1.33
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
o
C
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
-
-
-
-
-
6.0
-
25
-
-
-
-
-
-
-
-
-
TYP
-
-
100
-
2.1
2.9
7.0
-
-
10.6
45
60
22
12
180
280
400
640
MAX
-
250
-
2
2.4
3.5
-
±250
-
-
55
75
30
16
250
350
500
700
UNITS
V
µA
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5.5A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
I
C
= 45µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V,
L = 200µH, V
CE(PK)
= 1200V
I
C
= 5.5A, V
CE
= 0.5 BV
CES
I
C
= 5.5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 5.5A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25Ω
L = 5mH
Test Circuit (Figure 20)
2
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
I
EC
= 5.5A
I
EC
= 5.5A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
Thermal Resistance Junction To Case
R
θJC
IGBT
Diode
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= 5.5A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25Ω
L = 5mH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
20
12
225
350
1
1
2.4
48
30
-
-
MAX
25
16
300
400
1.2
1.1
3.3
60
40
0.75
1.9
UNITS
ns
ns
ns
ns
mJ
mJ
V
ns
ns
o
C/W
o
C/W
Typical Performance Curves
25
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
35
30
25
20
15
10
5
0
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 200µH
20
15
10
5
0
25
50
75
100
125
o
C)
T
C
, CASE TEMPERATURE (
150
0
200
400
600
800
1000
1200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
J
= 150
o
C, R
G
= 25Ω, L = 5mH, V
CE
= 960V
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
12V
15V
12V
V
CE
= 840V, R
G
= 25Ω, T
J
= 125
o
C
100
30
60
I
SC
50
25
50
T
C
= 75
o
C, V
GE
= 5V
IDEAL DIODE
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
20
40
20
10
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
1
15
t
SC
10
10
30
2
3
5
10
20
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
35
30
25
T
C
= -55
o
C
20
15
T
C
= 25
o
C
10
5
0
DUTY CYCLE < 0.5%, V
GE
= 12V
250µs PULSE TEST
0
1
6
8
2
3
4
5
7
9
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
T
C
= 150
o
C
80
70
60
50
40
30
20
10
0
0
DUTY CYCLE < 0.5%, V
GE
= 15V
250µs PULSE TEST
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000
E
ON
, TURN-ON ENERGY LOSS (mJ)
2500
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 25Ω, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 15V, V
GE
= 12V
1750
R
G
= 25Ω, L = 5mH, V
CE
= 960V
1500
T
J
= 150
o
C, V
GE
= 12V OR 15V
1250
1000
750
500
250
0
2000
1500
1000
500
T
J
= 25
o
C, V
GE
= 15V, V
GE
= 12V
0
2
3
4
5
6
7
8
9
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
1
2
3
4
5
6
7
8
9
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
10
10
35
70
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Typical Performance Curves
40
R
G
= 25Ω, L = 5mH, V
CE
= 960V
t
dI
, TURN-ON DELAY TIME (ns)
35
35
t
rI
, RISE TIME (ns)
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
25
20
15
10
10
0
Unless Otherwise Specified
(Continued)
40
R
G
= 25Ω, L = 5mH, V
CE
= 960V
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
25
20
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
15
2
3
4
5
6
7
8
9
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
2
3
4
5
6
7
8
9
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
600
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
500
400
300
200
100
0
R
G
= 25Ω, L = 5mH, V
CE
= 960V
900
800
t
fI
, FALL TIME (ns)
700
600
500
400
300
R
G
= 25Ω, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V AND 15V
T
J
= 25
o
C, V
GE
= 12V AND 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
1
2
3
4
5
6
7
8
9
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
200
100
1
2
3
5
4
6
7
8
9
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
90
80
70
60
50
40
30
20
10
0
6
DUTY CYCLE < 0.5%, V
CE
= 20V
250µs PULSE TEST
T
C
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
100
16
14
V
CE
= 1200V
12
10
8
6
4
2
0
7
13
14
8
9
11
12
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
15
16
0
10
20
I
G(REF)
= 1mA, R
L
= 120Ω, T
C
= 25
o
C
30
40
50
60
V
CE
= 400V
V
CE
= 800V
T
C
= -55
o
C
T
C
= 150
o
C
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
