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HM51W16165ALJ-7

EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

器件类别:存储    存储   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
SOJ
包装说明
SOJ, SOJ42,.44
针数
42
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J42
JESD-609代码
e0
长度
27.06 mm
内存密度
16777216 bit
内存集成电路类型
EDO DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
42
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ42,.44
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
3.3 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
3.76 mm
自我刷新
YES
最大待机电流
0.00015 A
最大压摆率
0.09 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
宽度
10.16 mm
Base Number Matches
1
文档预览
HM51W16165A Series
HM51W18165A Series
1048576-word
×
16-bit Dynamic Random Access Memory
ADE-203-372B (Z)
Rev. 2.0
Jul. 2, 1996
Description
The Hitachi HM51W16165A Series, HM51W18165A Series are CMOS dynamic RAMs organized as
1,048,576-word
×
16-bit. They employ the most advanced CMOS technology for high performance
and low power. HM51W16165A Series, HM51W18165A Series offer Extended Data Out (EDO) Page
Mode as a high speed access mode.
Features
Single 3.3 V (±0.3 V)
High speed
Access time: 60 ns/70 ns/80 ns (max)
Low power dissipation
Active mode : 468 mW/414 mW/360 mW (max) (HM51W16165A Series)
: 666 mW/594 mW/540 mW (max) (HM51W18165A Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Long refresh period
4096 refresh cycles : 64 ms (HM51W16165A Series)
: 128 ms (L-version)
1024 refresh cycles : 16 ms (HM51W18165A Series)
: 128 ms (L-version)
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS
INSTRUMENTS.
HM51W16165A Series, HM51W18165A Series
4 variations of refresh
RAS
-only refresh
CAS
-before-
RAS
refresh
Hidden refresh
Self refresh (L-version)
2
CAS
-byte control
Battery backup operation (L-version)
Ordering Information
Type No.
HM51W16165AJ-6
HM51W16165AJ-7
HM51W16165AJ-8
HM51W16165ALJ-6
HM51W16165ALJ-7
HM51W16165ALJ-8
HM51W18165AJ-6
HM51W18165AJ-7
HM51W18165AJ-8
HM51W18165ALJ-6
HM51W18165ALJ-7
HM51W18165ALJ-8
HM51W16165ATT-6
HM51W16165ATT-7
HM51W16165ATT-8
HM51W16165ALTT-6
HM51W16165ALTT-7
HM51W16165ALTT-8
HM51W18165ATT-6
HM51W18165ATT-7
HM51W18165ATT-8
HM51W18165ALTT-6
HM51W18165ALTT-7
HM51W18165ALTT-8
Access time
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
400-mil 50-pin plastic TSOP II (TTP-50/44DC)
Package
400-mil 42-pin plastic SOJ (CP-42D)
2
HM51W16165A Series, HM51W18165A Series
Pin Arrangement
HM51W16165AJ/ALJ Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
(Top view)
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
HM51W16165ATT/ALTT Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
(Top view)
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Pin Description
Pin name
A0 to A11
Function
Address input
— Row/Refresh address A0 to A11
— Column address
A0 to A7
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
I/O0 to I/O15
RAS
UCAS, LCAS
WE
OE
V
CC
V
SS
NC
3
HM51W16165A Series, HM51W18165A Series
Pin Arrangement
HM51W18165AJ/ALJ Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
(Top view)
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
HM51W18165ATT/ALTT Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
(Top view)
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Pin Description
Pin name
A0 to A9
Function
Address input
— Row/Refresh address A0 to A9
— Column address
A0 to A9
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
I/O0 to I/O15
RAS
UCAS, LCAS
WE
OE
V
CC
V
SS
NC
4
HM51W16165A Series, HM51W18165A Series
Block Diagram
RAS
RAS
Control
Circuit
UCAS LCAS
CAS
Control
Circuit
WE
WE
Control
Circuit
OE
OE
Control
Circuit
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
I/O0
I/O1
I/O
buffer
I/O14
I/O15
Row
decoder
&
driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Column decoder & driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Column decoder & driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
I/O2
I/O3
I/O12
I/O13
Row
decoder
&
driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
I/O
buffer
I/O4
I/O
buffer
I/O5
I/O10
I/O11
Row
decoder
&
driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Column decoder & driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
Column decoder & driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
I/O6
I/O7
I/O8
I/O9
Row
decoder
&
driver
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
256k memory cell array
Sense amp. & I/O bus
256k memory cell array
I/O
buffer
Column address buffer
Address : A0 to A7 : HM51W16165A
Address : A0 to A9 : HM51W18165A
Row address buffer
Address : A0 to A11 : HM51W16165A
Address : A0 to A9 : HM51W18165A
5
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