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HMC536MS8G_08

0 MHz - 6000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1 dB INSERTION LOSS
0 MHz - 6000 MHz 射频/微波开关, 1 dB 插入 损耗

器件类别:热门应用    无线/射频/通信   

厂商名称:Hittite Microwave(ADI)

厂商官网:http://www.hittite.com/

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器件参数
参数名称
属性值
最大工作温度
85 Cel
最小工作温度
-40 Cel
最大输入功率
.8 W
最大工作频率
6000 MHz
最小工作频率
0.0 MHz
加工封装描述
ROHS COMPLIANT, PLASTIC, SMT, MSOP-8
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
结构
COMPONENT
端子涂层
MATTE TIN (394) OVER COPPER
阻抗特性
50 ohm
最大插入损耗
1 dB
微波射频类型
DIVERSITY SWITCH
文档预览
HMC536MS8G
/
536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Typical Applications
The HMC536MS8G / HMC536MS8GE is ideal for:
• Cellular/PCS/3G Infrastructure
• ISM/MMDS/WiMAX
• CATV/CMTS
• Test Instrumentation
Features
Input P0.1dB: +34 dBm @ +5V
Insertion Loss: 0.5 dB
Positive Control: +3V or +5V
MS8G SMT Package, 14.8 mm
2
Isolation: 27 dB
Very Fast Switching Speed
Included in the HMC-DK005 Designer’s Kit
10
SWITCHES - SMT
Functional Diagram
General Description
The HMC536MS8G & HMC536MS8GE are DC to
6 GHz GaAs MMIC T/R switches in 8 lead MSOP8G
surface mount packages with an exposed ground
paddle. The switch is ideal for cellular/PCS/3G
basestation applications featuring low 0.5 dB inser-
tion loss and +55 dBm input IP3. Power handling is
excellent up through 6 GHz with the switch offering
a P0.1dB compression point of +29 dBm at +3 volts
control. On-chip circuitry allows positive voltage con-
trol of 0/+3 volts or 0/+5 volts at very low DC currents.
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/+3 Vdc to +5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 3.0 GHz
DC - 4.5 GHz
DC - 6.0 GHz
DC - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
(Vctl = 3V)
(Vctl = 5V)
0.5 - 6.0 GHz
0.5 - 6.0 GHz
0.5 - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
DC - 6.0 GHz
27
32
23
26
27
Min.
Typ.
0.5
0.6
0.7
27
30
32
25
20
12
29
34
56
52
48
15
30
Max.
0.8
0.9
1.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
ns
ns
Insertion Loss
Isolation (RFC to RF1/RF2)
Return Loss
Input Power for 0.1 dB Compression
Input Third Order Intercept
(Vctl = 3V, 5V)
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90%
RF)
tON, tOFF (50% CTL to 10/90% RF)
10 - 294
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC536MS8G
/
536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Insertion Loss
0
Return Loss
0
-5
RFC
RF1
RF2
INSERTION LOSS (dB)
RETURN LOSS (dB)
4
5
6
-0.5
-10
-15
-20
-25
-30
-1
+25 C
+85 C
-40 C
-1.5
-2
0
1
2
3
FREQUENCY (GHz)
-35
0
1
2
3
4
5
6
FREQUENCY (GHz)
10
SWITCHES - SMT
10 - 295
Isolation Between
Ports RFC and RF1 / RF2
0
-5
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
6
FREQUENCY (GHz)
RF1
Isolation Between Ports RF1 and RF2
0
-5
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
6
FREQUENCY (GHz)
RF2
Input 0.1 dB Compression Point
INPUT 0.1dB COMPRESSION POINT (dBm)
40
38
36
34
32
30
5V
3V
Input Third Order
Intercept Point, Vctl = 3v
64
60
56
IP3 (dBm)
52
48
44
+25C
+85C
-40C
28
26
0
1
2
3
4
5
6
FREQUENCY (GHz)
40
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC536MS8G
/
536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Control Voltages
*Control Input Tolerances are ± 0.2 Vdc
State
Low
High
Bias Condition*
0 Vdc @ 25 μA Typical
+3 Vdc to +5 Vdc @ 25 μA Typical
Absolute Maximum Ratings
Control Voltage Range
Hot Switch Power Level
(Vctl = +3V)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13 mW/°C above 85 °C)
Thermal Resistance
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-0.5 to +7.5 Vdc
+29 dBm
150 °C
0.867 W
75 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Truth Table
Control Input
A
Low
High
B
High
Low
Signal Path State
RFC to:
RF1
RF2
10
SWITCHES - SMT
DC blocks are required at ports RFC, RF1, RF2.
Choose value for lowest frequency of operation.
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC536MS8G
HMC536MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H536
XXXX
H536
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
10 - 296
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC536MS8G
/
536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Pin Descriptions
Pin Number
1
Function
A
Description
See truth and control voltage tables.
Interface Schematic
2
B
See truth and control voltage tables.
3, 5, 8
RFC, RF1, RF2
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
No connection required. This pin may be connected
to RF/DC ground without affecting performance
Package bottom has exposed metal paddle that
must also be connected to RF/DC ground.
4
N/C
6, 7
GND
10
SWITCHES - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 297
HMC536MS8G
/
536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Evaluation PCB
10
SWITCHES - SMT
List of Materials for Evaluation PCB 105143
[1]
Item
J1 - J3
J4 - J6
C1 - C3
R1 - R2
U1
PCB
[2]
Description
PCB Mount SMA RF Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
100 Ohm Resistor, 0402 Pkg.
HMC536MS8G / HMC536MS8GE
SPDT Switch
107821 Evaluation PCB
The circuit board used in the final application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
exposed paddle should be connected directly to the
ground plane similar to that shown above. The eval-
uation circuit board shown above is available from
Hittite Microwave Corporation upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
10 - 298
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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参数对比
与HMC536MS8G_08相近的元器件有:536MS8GE。描述及对比如下:
型号 HMC536MS8G_08 536MS8GE
描述 0 MHz - 6000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1 dB INSERTION LOSS 0 MHz - 6000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1 dB INSERTION LOSS
最大工作温度 85 Cel 85 Cel
最小工作温度 -40 Cel -40 Cel
最大输入功率 .8 W .8 W
最大工作频率 6000 MHz 6000 MHz
最小工作频率 0.0 MHz 0.0 MHz
加工封装描述 ROHS COMPLIANT, PLASTIC, SMT, MSOP-8 ROHS COMPLIANT, PLASTIC, SMT, MSOP-8
无铅 Yes Yes
欧盟RoHS规范 Yes Yes
状态 ACTIVE ACTIVE
结构 COMPONENT COMPONENT
端子涂层 MATTE TIN (394) OVER COPPER MATTE TIN (394) OVER COPPER
阻抗特性 50 ohm 50 ohm
最大插入损耗 1 dB 1 dB
微波射频类型 DIVERSITY SWITCH DIVERSITY SWITCH
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