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HN1A01FU-Y(TE85L,F)

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-G6
针数
6
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
120
JESD-30 代码
R-PDSO-G6
元件数量
2
端子数量
6
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
80 MHz
Base Number Matches
1
文档预览
HN1A01FU
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process)
HN1A01FU
Audio Frequency General Purpose Amplifier Applications
l
Small package (Dual type)
l
High voltage and high current
: V
CEO
=−50V, I
C
=−150mA (max)
l
High h
FE
: h
FE
=
120~400
l
Excellent h
FE
linearity
: h
FE
(I
C
=−0.1mA) / h
FE
(I
C
=−2mA) = 0.95 (typ.)
Unit: mm
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
200
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
°
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
V
MHz
pF
Unit
µA
µA
Note:
h
FE
Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
1
2001-06-07
HN1A01FU
Marking
Equivalent Circuit
(Top View)
2
2001-06-07
HN1A01FU
(Q1,Q2 Common)
3
2001-06-07
HN1A01FU
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
4
2001-06-07
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参数对比
与HN1A01FU-Y(TE85L,F)相近的元器件有:HN1A01FUTE85N。描述及对比如下:
型号 HN1A01FU-Y(TE85L,F) HN1A01FUTE85N
描述 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
厂商名称 Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
针数 6 6
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 120 120
JESD-30 代码 R-PDSO-G6 R-PDSO-G6
元件数量 2 2
端子数量 6 6
最高工作温度 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz
Base Number Matches 1 1
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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