HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Audio Frequency General Purpose Amplifier Applications
Q1:
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
Q2:
High voltage and high current
: V
CEO
=
−50V,
I
C
=
−150mA
(max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1mA)
/ h
FE
(I
C
=
−2mA)
= 0.95 (typ.)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 3.0mg (typ.)
Marking
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−50
−50
−5
−150
−30
Unit
V
V
V
mA
mA
Type Name
5
4
hFE Rank
6
1D
1
2
3
Equivalent Circuit (Top View)
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
100
150
−55~150
Unit
mW
°C
°C
6
5
4
Q1
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2007-11-01
HN1B04FE
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
0.1
―
2
Max
0.1
0.1
400
0.25
―
―
V
MHz
pF
Unit
μA
μA
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
−0.1
―
4
Max
−0.1
−0.1
400
−0.3
―
―
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
2
2007-11-01
HN1B04FE
Q1 (NPN transistor)
3
2007-11-01
HN1B04FE
Q2 (PNP transistor)
4
2007-11-01
HN1B04FE
(Q1, Q2 Common)
P
C
*
– Ta
(mW)
COLLECTOR POWER DISSIPATION P
C
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (°C)
*:Total Rating
5
2007-11-01
