HN29WT800 Series
HN29WB800 Series
1048576-word
×
8-bit / 524288-word
×
16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword
×
8-bit/512-kword
×
16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
•
On-board single power supply (V
CC
): V
CC
= 3.3 V
±
0.3 V
•
Access time: 80/100/120 ns (max)
•
Low power dissipation:
I
CC
= 30 mA (max) (Read)
I
CC
= 200
µA
(max) (Standby)
I
CC
= 40 mA (max) (Program)
I
CC
= 40 mA (max) (Erase)
I
CC
= 1
µA
(typ) (Deep powerdown)
•
Automatic page programming:
Programming time: 25 ms (typ)
Program unit: 128 word
•
Automatic erase:
Erase time: 50 ms (typ)
Erase unit: Boot block; 8-kword/16-kbyte
×
1
Parameter block; 4-kword/8-kbyte
×
2
Main block; 16-kword/32-kbyte
×
1
32-kword/64-kbyte
×
15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.
HN29WT800 Series, HN29WB800 Series
•
Block boot:
HN29WT800 Series: Top boot
HN29WB800 Series: Bottom boot
•
Program/Erase endurance
10,000 cycles
•
Other functions:
Software command control
Selective block lock
Program suspend/Resume
Erase suspend/Resume
Status register read
•
Compatible with M5M29FB/T800xx by Ltd. Mitsubishi
Ordering Information
Type No.
HN29WT800T-8
HN29WT800T-10
HN29WT800T-12
HN29WB800T-8
HN29WB800T-10
HN29WB800T-12
HN29WT800R-8
HN29WT800R-10
HN29WT800R-12
HN29WB800R-8
HN29WB800R-10
HN29WB800R-12
Access time
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
12
×
20.0 mm
2
48-pin plastic TSOP I (Reverse)
(TFP-48DR)
Package
12
×
20.0 mm
2
48-pin plastic TSOP I (TFP-48D)
2
HN29WT800 Series, HN29WB800 Series
Pin Arrangement
HN29WT800T Series
HN29WB800T Series
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RP
NC
WP
RDY/Busy
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
(Top view)
HN29WT800R Series
HN29WB800R Series
A16
BYTE
V
SS
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
V
CC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
V
SS
CE
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
(Top view)
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RP
NC
WP
RDY/Busy
A18
A17
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
V
SS
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
V
CC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
V
SS
CE
A0
3
HN29WT800 Series, HN29WB800 Series
Pin Description
Pin name
A-1 to A18
I/O0 to I/O15
CE
OE
WE
RP
RDY/Busy
WP
BYTE
V
CC
V
SS
NC
Function
Address
Input/output
Chip enable
Output enable
Write enable
Reset/Powerdown
Ready/Busy
Write protect
Byte enable
Power supply
Ground
No connection
4
HN29WT800 Series, HN29WB800 Series
Block Diagram
128-word page buffer
Boot block 8-kword
Parameter block 1 4-kword
Parameter block 2 4-kword
Main block 16-kword
Main block 32-kword
.
.
Main block 32-kword
A8 to A18
X-address
buffer
X-decorder
A0 to A7
Y-address
buffer
Y-decorder
Y-gate /Sens AMP.
Status/ ID register
Multiplexer
CE
OE
WE
WP
RP
BYTE
RDY/Busy
CUI
WSM
Input/output buffers
V
CC
V
SS
I/O0
I/O15/A-1
CUI: Command User Interface
WSM: Write State Machine
5
