Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HSBD175
█ APPLICATIONS
Medium Power Linear switching Applications
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 30W
V
CBO
——Collector-Base
Voltage…………………………… 45V
V
CEO
——Collector-Emitter
Voltage………………………… 45V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
I
C
——Collector
Current Pulse）
（
…………………………………
7A
I
C
——Collector
Current（DC）……………………………… 3A
1―
Emitter, E
2―Collector，C
3―Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
*H
FE（1）
*H
FE（2）
*V
CE(sat)
*V
BE(on)
V
CEO(sus)
f
t
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
45
3
40
15
100
1
250
0.8
1.3
μA
mA
V
CB
=45V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=1A
V
V
V
MHz
I
C
=1A, I
B
=0.1A
V
CE
=2V, I
C
=1A
I
C
=100mA, I
B
=0
V
CE
=10V, I
C
=250mA,
*Pulse Test:PW=300μs,Duty Cycle=1.5% Pulsed
█h
FE(3)
Classification
Cassification
6
40~100
10
63~160
16
100~250
h
FE(3)
