HSMP-382x, 482x
Surface Mount RF PIN Switch and Limiter Diodes
Data Sheet
Description/Applications
The HSMP-382x series is optimized for switching appli-
cations where ultra-low resistance is required. The
HSMP-482x diode is ideal for limiting and low induc-
tance switching applications up to 1.5 GHz.
A SPICE model is not available for PIN diodes as
SPICE does not provide for a key PIN diode character-
istic, carrier lifetime.
Features
• Diodes Optimized for:
Low Current Switching
Low Distortion Attenuating
• Power Limiting /Circuit Protection
• Surface Mount SOT-23 and SOT-323 Packages
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
[1]
• Lead-free Option Available
Package Lead Code Identification, SOT-323
(Top View)
DUAL ANODE
Note:
1. For more information see the Surface Mount PIN Reliability
Data Sheet.
HSMP-482B
Package Lead Code Identification, SOT-23
(Top View)
SINGLE
SERIES
#0
COMMON
ANODE
#2
COMMON
CATHODE
#3
DUAL ANODE
#4
HSMP-4820
2
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23
1
50
150
-65 to 150
500
SOT-323
1
50
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made
to the circuit board.
Electrical Specifications T
C
= 25°C
Part Number
HSMP-
3820
3822
3823
3824
Test Conditions
Package
Marking
Code
F0
F2
F3
F4
Lead
Code
0
2
3
4
Minimum
Breakdown
Voltage V
BR
(V)
50
Maximum
Series Resistance
R
S
(Ω)
0.6
Maximum
Total Capacitance
C
T
(pF)
0.8
Configuration
Single
Series
Common Anode
Common Cathode
V
R
= V
BR
Measure
I
R
≤
10
µA
f = 100 MHz
I
F
= 10 mA
f = 1 MHz
V
R
= 20 V
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part
Number
HSMP-
4820
482B
Package
Marking
Code
FA
FA
Minimum
Breakdown
Voltage
V
BR
(V)
50
V
R
= V
BR
Measure
I
R
≤
10
µA
Maximum
Series
Resistance
R
S
(Ω)
0.6
I
F
= 10 mA
Typical
Total
Capacitance
C
T
(pF)
0.75
f = 1 MHz
V
R
= 20 V
Maximum
Total
Capacitance
C
T
(pF)
1.0
f = 1 MHz
V
R
= 0 V
Typical
Total
Inductance
L
T
(nH)
1.0
f = 500 MHz –
3 GHz
Lead
Code
A
A
Configuration
Dual Anode
Dual Anode
Test Conditions
Typical Parameters at T
C
= 25°C
Part Number
HSMP-
382x
Test Conditions
Series Resistance
R
S
(Ω)
1.5
f = 100 MHz
I
F
= 10 mA
Carrier Lifetime
τ
(ns)
70
I
F
= 10 mA
Reverse Recovery Time
T
rr
(ns)
7
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.60 @ 20 V
3
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
T
rr
– REVERSE RECOVERY TIME (ns)
100
I
F
– FORWARD CURRENT (mA)
100
100
10
V
R
= 2V
V
R
= 5V
10
V
R
= 10V
RF RESISTANCE (OHMS)
CW POWER OUT (dBm)
10
1
1
0.1
125°C 25°C –50°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
20
FORWARD CURRENT (mA)
30
V
F
– FORWARD VOLTAGE (mA)
0.1
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Forward Current vs.
Forward Voltage.
Figure 2. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages.
120
INPUT INTERCEPT POINT (dBm)
Figure 3. RF Resistance at 25°C vs.
Forward Bias Current.
1.4
CAPACITANCE (pF)
1.2
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
30
25
20
15
10
5
0
Measured with external
bias return
0
5
10
15
20
25
30
35
40
1.5 GHz
1.0
1.0 GHz
0.8
0.6
0
10
20
30
40
50
1
10
30
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
CW POWER IN (dBm)
Figure 4. Capacitance vs. Reverse
Voltage.
Figure 5. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
Figure 6. Large Signal Transfer Curve
of the HSMP-482x Limiter.
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1
RF 2
RF 1
RF 2
BIAS 1
BIAS 2
BIAS
BIAS
Figure 7. Simple SPDT Switch, Using Only Positive
Current.
Figure 8. High Isolation SPDT Switch, Dual Bias.
4
Typical Applications for Multiple Diode Products,
continued
RF COMMON
BIAS
RF COMMON
RF 1
RF 2
RF 1
BIAS
RF 2
Figure 9. Switch Using Both Positive and Negative
Bias Current.
Figure 10. Very High Isolation SPDT Switch,
Dual Bias.
BIAS
Figure 11. High Isolation SPST Switch (Repeat Cells
as Required.
Figure 12. Power Limiter Using HSMP-3822 Diode
Pair. See Application Note 1050 for details.
5
Typical Applications for HSMP-
482x Low Inductance Series
Microstrip Series Connection for
HSMP-482x Series
In order to take full advantage of
the low inductance of the
HSMP-482x series when using
them in series applications, both
lead 1 and lead 2 should be
connected together, as shown in
Figure 14.
3
HSMP-482x Series
In Figure 15, the center conductor
of the microstrip line is inter-
rupted and leads 1 and 2 of the
HSMP-482x diode are placed
across the resulting gap. This
forces the 0.5 nH lead inductance
of leads 1 and 2 to appear as part
of a low pass filter, reducing the
shunt parasitic inductance and
increasing the maximum available
attenuation. The 0.3 nH of shunt
inductance external to the diode
is created by the via holes, and is
a good estimate for 0.032" thick
material.
50 OHM MICROSTRIP LINES
Co-Planar Waveguide Shunt
Connection for HSMP-482x Series
Co-Planar waveguide, with
ground on the top side of the
printed circuit board, is shown in
Figure 17. Since it eliminates the
need for via holes to ground, it
offers lower shunt parasitic
inductance and higher maximum
attenuation when compared to a
microstrip circuit. See AN1050 for
details.
Co-Planar Waveguide
Groundplane
Center Conductor
Groundplane
1
HSMP-482x
2
Figure 13. Internal Connections.
Figure 17. Circuit Layout.
PAD CONNECTED TO
GROUND BY TWO
VIA HOLES
Figure 14. Circuit Layout.
Figure 15. Circuit Layout,
HSMP-482x Limiter.
0.8 pF
0.75 nH
Microstrip Shunt Connections for
1.5 nH
1.5 nH
Figure 18. Equivalent Circuit.
0.8 pF
0.3 nH
0.3 nH
Figure 16. Equivalent Circuit.
