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HSMP-3833-BLKG

Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3

器件类别：分立半导体    二极管   

厂商名称：Broadcom(博通)

器件标准：

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Broadcom(博通)
包装说明
R-PDSO-G3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW DISTORTION
应用
ATTENUATOR; SWITCHING
最小击穿电压
200 V
配置
COMMON ANODE, 2 ELEMENTS
最大二极管电容
0.3 pF
标称二极管电容
0.3 pF
二极管元件材料
SILICON
最大二极管正向电阻
1.5 Ω
二极管电阻测试电流
100 mA
二极管电阻测试频率
100 MHz
二极管类型
PIN DIODE
JESD-30 代码
R-PDSO-G3
JESD-609代码
e4
少数载流子标称寿命
0.5 µs
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
最大功率耗散
0.25 W
认证状态
Not Qualified
反向测试电压
50 V
表面贴装
YES
技术
POSITIVE-INTRINSIC-NEGATIVE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
HSMP-383x
Surface Mount RF PIN Diodes
Data Sheet
Description/Applications
The HSMP-383x series of general purpose PIN diodes
are designed for two classes of applications. The first
is attenuators where current consumption is the most
important design consideration. The second application
for this series of diodes is in switches where low
capacitance is the driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total
Resistance (R
T
) are typical specifications. For applications
that require guaranteed performance, the general
purpose HSMP-383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic,
carrier lifetime.
Features
•
Diodes Optimized for:
Low Capacitance Switching
Low Current Attenuator
•
Surface Mount SOT-23 Package
Single and Dual Versions
Tape and Reel Options Available
•
Low Failure in Time (FIT) Rate
[1]
•
Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability Data Sheet.
Package Lead Code Identification (Top View)
SINGLE
SERIES
#0
COMMON
ANODE
#2
COMMON
CATHODE
#3
#4
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
t
P
iv
T
j
T
STG
Parameter
Forward Current (1 ms Pulse)
Total Device Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Units
Amp
mW
[2]
—
°C
°C
Absolute Maximum
1
250
Same as V
BR
150
-65 to 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. CW Power Dissipation at T
LEAD
= 25°C. Derate to zero at maximum rated temperature.
PIN General Purpose Diodes, Electrical Specifications T
C
= 25°C
Part
Number
HSMP-
3830
3832
3833
3834
Package
Marking
Code
K0
K2
K3
K4
Lead
Code
0
2
3
4
Configuration
Single
Series
Common Anode
Common Cathode
Minimum
Breakdown
Voltage
V
BR
(V)
200
Maximum
Series
Resistance
R
S
(Ω)
1.5
Maximum
Total
Capacitance
C
T
(pF)
0.3
est Conditions
T
V
R
= V
BR
Measure
I
R
≤ 10 mA
I
F
= 100 mA
f = 100 MHz
V
R
= 50 V
f = 1 MHz
Typical Parameters at T
C
= 25°C
Part Number
HSMP-
383x
Series Resistance
R
S
(Ω)
20
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
500
I
F
= 50 mA
I
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
80
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.20 @ 50 V
est Conditions
T
2
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
100
0.35
1000
I
F
– FORWARD CURRENT (mA)
TOTAL CAPACITANCE (pF)
10
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
RF RESISTANCE (OHMS)
8
10 12 14 16 18 20
100
1
10
0.1
125C
0
0.2
0.4
25C
0.6
–50C
0.8
1.0
1.2
1
0.01
0.15
0
2
4
6
0.1
0.01
0.1
1
10
100
V
F
– FORWARD VOLTAGE (mA)
REVERSE VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Forward Current vs. Forward Voltage.
Figure 2. RF Capacitance vs. Reverse Bias.
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
INPUT INTERCEPT POINT (dBm)
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
110 Series Attenuator
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
T
rr
- REVERSE RECOVERY TIME (nS)
120
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1000
HSMP-3830
V
R
= 5V
100
V
R
= 10V
V
R
= 20V
1
10
30
10
10
20
FORWARD CURRENT (mA)
30
DIODE RF RESISTANCE ()
I
F
– FORWARD BIAS CURRENT (mA)
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.
3
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1
RF 2
RF 1
RF 2
BIAS
BIAS
BIAS 1
BIAS 2
Figure 7. Simple SPDT Switch, Using Only Positive Current.
Figure 8. High Isolation SPDT Switch, Dual Bias.
RF COMMON
BIAS
RF COMMON
RF 1
RF 2
RF 1
BIAS
RF 2
Figure 9. Switch Using Both Positive and Negative Current.
Figure 10. Very High Isolation SPDT Switch, Dual Bias.
4
Typical Applications for Multiple Diode Products
(continued)
VARIABLE BIAS
INPUT
RF IN/OUT
FIXED
BIAS
VOLTAGE
Figure 11. Four Diode
π
Attenuator. See AN1048 for details.
BIAS
Figure 12. High Isolation SPST Switch (Repeat Cells as Required).
5
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参数对比
与HSMP-3833-BLKG相近的元器件有：HSMP-3830-BLKG、HSMP-3830-TR1、HSMP-3832-BLKG、HSMP-3832-TR1G、HSMP-3832-TR2G、HSMP-3833-TR1G、HSMP-3833-TR2G、HSMP-3832-TR1。描述及对比如下：
型号 HSMP-3833-BLKG HSMP-3830-BLKG HSMP-3830-TR1 HSMP-3832-BLKG HSMP-3832-TR1G HSMP-3832-TR2G HSMP-3833-TR1G HSMP-3833-TR2G HSMP-3832-TR1
描述 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, SOT-23, 3 PIN Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 200V V(BR), Silicon, SOT-23, 3 PIN
是否Rohs认证 符合 符合 不符合 符合 符合 符合 符合 符合 不符合
包装说明 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 SOT-23, 3 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant unknown
其他特性 LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION
应用 ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
最小击穿电压 200 V 200 V 200 V 200 V 200 V 200 V 200 V 200 V 200 V
配置 COMMON ANODE, 2 ELEMENTS SINGLE SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF
标称二极管电容 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF 0.3 pF
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
最大二极管正向电阻 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω
二极管电阻测试电流 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
二极管电阻测试频率 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
二极管类型 PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e4 e4 e0 e4 e4 e4 e4 e4 e0
少数载流子标称寿命 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs
元件数量 2 1 1 2 2 2 2 2 2
端子数量 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 NOT SPECIFIED 260 260 260 260 260 NOT SPECIFIED
最大功率耗散 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
反向测试电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) TIN LEAD Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Broadcom(博通) Broadcom(博通) - Broadcom(博通) Broadcom(博通) Broadcom(博通) Broadcom(博通) Broadcom(博通) Broadcom(博通)
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
湿度敏感等级 1 1 - 1 1 1 1 1 -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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