型号
- 型号
- 关键词
| 型号 | HUF75329S3S | HUF75329P3 | HUF75329G3 |
|---|---|---|---|
| 描述 | 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 49A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V |
| 最大漏极电流 (Abs) (ID) | 42 A | 42 A | 42 A |
| 最大漏极电流 (ID) | 42 A | 42 A | 49 A |
| 最大漏源导通电阻 | 0.025 Ω | 0.025 Ω | 0.024 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-220AB | TO-247 |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 94 W | 94 W | 94 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 厂商名称 | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - |
| 功耗环境最大值 | 94 W | 94 W | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - |
| 最大关闭时间（toff） | 100 ns | 100 ns | - |
| 最大开启时间（吨） | 105 ns | 105 ns | - |
