CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 4.7A, V
GS
= 10V (Figure 9, 10)
I
D
= 2.7A, V
GS
= 5V (Figure 9)
I
D
= 2.6A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.027
0.033
0.035
3
0.031
0.038
0.040
V
W
W
W
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
R
θJA
Pad Area = 0.173 in
2
(Note 2)
Pad Area = 0.068 in
2
(See TB377)
Pad Area = 0.026 in
2
(See TB377)
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
2.6A,
R
L
= 5.8Ω, V
GS
=
4.5V,
R
GS
= 18Ω
(Figure 15)
-
-
-
-
-
-
-
12
46
31
31
-
90
-
-
-
-
95
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
110
133
157
o
C/W
o
C/W
o
C/W
2
HUF76113T3ST
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTES:
2. Rated with R
θJA
=110
o
C/W measured using FR-4 board with 0.173 in
2
copper at 1000 seconds.
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
625
310
60
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V, I
D
≅
2.7A,
R
L
= 5.5Ω
I
g(REF)
= 1.0mA
(Figure 14)
-
-
-
-
-
17.0
9.5
0.73
1.50
4.30
20.5
11.5
0.90
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
4.7A,
R
L
= 3.2Ω, V
GS
=
10V,
R
GS
= 9.1Ω
(Figure 16)
-
-
-
-
-
-
-
4
21
31
25
-
40
-
-
-
-
85
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
I
SD
= 4.7A
I
SD
= 2.7A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 2.7A, dI
SD
/dt = 100A/µs
I
SD
= 2.7A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
44
46
UNITS
V
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
5
V
GS
= 10V, R
θJA
= 110
o
C/W
4
3
V
GS
= 4.5V, R
θJA
= 110
o
C/W
2
1
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
3
HUF76113T3ST
Typical Performance Curves
2
1
THERMAL IMPEDANCE
Z
θ
JA
, NORMALIZED
(Continued)
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
R
θ
JA
= 110
o
C/W
0.01
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-1
10
0
10
1
10
2
10
3
0.001
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
R
θ
JA
= 110
o
C/W
I
DM
, PEAK CURRENT (A)
100
V
GS
= 5V
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
A
125
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10
2
10
3
FIGURE 4. PEAK CURRENT CAPABILITY
200
100
I
D
, DRAIN CURRENT (A)
40
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
A
= 25
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
100µs
10
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 30V
1
10
1ms
STARTING T
J
= 150
o
C
10ms
1
1
100
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
