HUF76439S3S
Data Sheet
October
2013
N-Channel Logic Level UltraFET Power MOSFET
60 V, 71 A, 14 mΩ
Packaging
JEDEC TO-263AB
DRAIN
(FLANGE)
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.012Ω,
V
GS
=
10V
- r
DS(ON)
= 0.014Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
SOURCE
Symbol
D
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER
PACKAGE
TO-263AB
BRAND
76439S
HUF76439S3ST
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF76439S3ST
UNITS
V
V
V
A
A
A
A
60
60
±16
75
75
54
52
Figure 4
Figures 6, 17, 18
180
1.20
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76439S3S Rev.
C0
HUF76439S3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
I
D
= 250µA, V
GS
= 0V (Figure 12)
I
D
= 250µA, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
Zero Gate Voltage Drain Current
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 54A, V
GS
= 5V (Figure 9)
I
D
= 52A, V
GS
= 4.5V (Figure 9)
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-263AB
-
-
-
-
0.96
62
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
60
55
-
-
-
-
-
-
-
-
-
-
1
250
±100
V
V
µA
µA
nA
V
GS
=
±16V
1
-
-
-
-
0.010
0.0117
0.0125
3
0.012
0.014
0.015
V
Ω
Ω
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 50A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
V
DD
= 30V, I
D
= 75A
V
GS
=
10V,
R
GS
= 3.9Ω
(Figures 16, 21, 22)
V
DD
= 30V, I
D
= 52A
V
GS
=
4.5V, R
GS
= 3.9Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
16
300
29
105
-
470
-
-
-
-
200
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
2745
840
145
-
-
-
pF
pF
pF
-
-
-
-
-
70
38
2.5
8
19
84
45
3
-
-
nC
nC
nC
nC
nC
-
-
-
-
-
-
-
11
125
45
125
-
205
-
-
-
-
255
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 54A
I
SD
= 27A
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 54A, dI
SD
/dt = 100A/µs
I
SD
= 54A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
72
140
UNITS
V
V
ns
nC
©2001 Fairchild Semiconductor Corporation
HUF76439S3S Rev.
C0
HUF76439S3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
80
V
GS
= 10V
60
V
GS
= 4.5V
40
I
D
, DRAIN CURRENT (A)
20
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
V
GS
= 10V
175 - T
C
150
I
DM
, PEAK CURRENT (A)
V
GS
= 5V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
50
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF76439S3S Rev.
C0
HUF76439S3S
Typical Performance Curves
1000
(Continued)
500
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
100
100µs
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
STARTING T
J
= 25
o
C
1ms
10ms
STARTING T
J
= 150
o
C
10
1
100
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
I
D,
DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
V
GS
= 10V
V
GS
= 5V
120
V
GS
= 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 3.5V
30
V
GS
= 3V
0
5.0
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
90
90
60
T
J
= 175
o
C
30
T
J
= -55
o
C
T
J
= 25
o
C
2.0
2.5
3.5
4.0
3.0
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
60
0
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
25
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 75A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
20
I
D
= 50A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
V
GS
= 10V, I
D
= 75A
15
I
D
= 25A
10
1.5
1.0
5
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0.5
-80
-40
160
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF76439S3S Rev.
C0
HUF76439S3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
1.2
I
D
= 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5000
C
ISS
=
C
GS
+ C
GD
1000
C
RSS
=
C
GD
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
C, CAPACITANCE (pF)
8
6
C
OSS
≅
C
DS
+ C
GD
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 50A
I
D
= 25A
0
15
30
45
60
75
2
100
V
GS
= 0V, f = 1MHz
50
0.1
1.0
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
Q
g
, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
1000
V
GS
= 4.5V, V
DD
= 30V, I
D
= 48A
SWITCHING TIME (ns)
SWITCHING TIME (ns)
800
t
r
600
500
V
GS
= 10V, V
DD
= 30V, I
D
= 75A
400
t
d(OFF)
300
t
r
200
t
f
400
t
f
200
t
d(OFF)
t
d(ON)
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
100
t
d(ON)
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
0
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76439S3S Rev.
C0
