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HWF1686RA

L-Band GaAs Power FET

器件类别:分立半导体    晶体管   

厂商名称:Hexawave

厂商官网:http://www.hw.com.tw

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Hexawave
包装说明
SMALL OUTLINE, R-CDSO-G2
Reach Compliance Code
unknown
最大漏极电流 (Abs) (ID)
0.6 A
FET 技术
METAL SEMICONDUCTOR
JESD-30 代码
R-CDSO-G2
湿度敏感等级
1
端子数量
2
最高工作温度
175 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
225
极性/信道类型
N-CHANNEL
功耗环境最大值
5.4 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
HWF1686RA
L-Band GaAs Power FET
June 2005
V3
Outline Dimensions
Features
Output Power:
P
1dB
=30 dBm (typ.)
High Gain:
GL=16 Db (typ.)
High Efficiency:
PAE =45% (typ.)
High Linearity:
IP3=45 dBm (typ.)
Low Cost
Description
The HWF1686RA is a medium power GaAs
MESFET designed for various RF and Microwave
applications. It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
V
DS
[1]
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2 mA
175
°
C
-65 to +175
°
C
3.5 W
V
GS
I
D
I
G
T
CH
T
STG
P
T
[1]
[2]
RA Package (Ceramic)
Hexawave recommends that the quiescent
drain-source operating voltage (V
DS
) should not
exceed 10 Volts.
[2]Mounted on an infinite heat sink.
Electrical Specification at 25
°
C
Symbol
I
DSS
V
P
Parameters
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
Output Power @1dB Gain
Linear Power Gain
Power-added Efficiency (P
out
= P
1dB
)
Third-order Intercept Point
[3]
Conditions
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=20 mA
V
DS
=3V, I
DS
=200 mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
f=2.4 GHz
Units
mA
V
mS
°
C/W
dBm
dB
%
dBm
Min.
300
-3.5
-
-
29.0
15
-
-
Typ.
400
-2.0
200
30
30.0
16
45
45
Max.
600
-1.5
-
40
-
-
-
-
g
m
R
th
P
1dB
G
L
PAE
IP
3
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Typical Performance at
25
°
C
Output Power, Efficiency & Gain vs. Input Power
V
DS
=10V, I
DS
=0.5I
DSS
f=2.4GHz
40
50
η
35
add
40
P
out
(dBm)
30
Gain (dB)
15
10
20
10
5
0
0
2
4
6
8
10
12
14
16
18
20
0
Power Derating Curve
Total Power Dissipation,P
T
(W)
6
Gain
4
(25,3.5)
2
P
in
(dBm)
(175,0)
0
0
50
100
150
200
Case Temperature,T
C
(℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
.
η
add
20
(%)
25
P
out
30
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Typical S-Parameters
(Common Source, T
A
=25
°
C, V
DS
=10V, I
DS
=0.5I
DSS
)
Freq
(GHz)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
S
11
Mag.
0.966
0.954
0.954
0.955
0.951
0.943
0.943
0.943
0.947
0.947
0.949
0.946
0.949
0.950
0.949
0.948
0.951
0.947
0.946
0.944
0.940
0.939
0.940
0.936
0.932
0.931
0.900
0.897
0.882
0.846
0.781
0.626
0.265
S
21
Ang.
Mag.
7.901
7.488
7.065
6.693
6.327
5.953
5.612
5.283
4.979
4.700
4.434
4.199
3.970
3.771
3.579
3.402
3.245
3.081
2.942
2.811
2.691
2.577
2.473
2.374
2.290
2.198
1.664
1.431
1.301
1.206
1.210
1.414
1.774
S
12
Ang.
Mag.
0.014
0.015
0.017
0.018
0.019
0.020
0.021
0.021
0.021
0.022
0.022
0.022
0.021
0.021
0.021
0.021
0.020
0.020
0.020
0.020
0.019
0.019
0.019
0.018
0.018
0.018
0.016
0.016
0.008
0.015
0.022
0.026
0.051
S
22
Ang.
53.040
46.780
40.360
36.440
30.700
26.080
21.660
17.640
14.800
10.930
7.860
4.280
2.480
-0.240
-2.920
-4.520
-6.500
-7.550
Mag.
0.455
0.453
0.444
0.447
0.450
0.454
0.457
0.465
0.468
0.478
0.485
0.494
0.502
0.512
0.524
0.533
0.545
0.558
0.569
0.579
0.591
0.601
0.613
0.625
0.636
0.646
0.733
0.774
0.792
0.837
0.841
0.833
0.839
Ang.
-44.490
-49.140
-55.370
-60.860
-66.130
-71.560
-76.340
-81.450
-85.610
-89.680
-93.630
-97.440
-101.200
-104.460
-107.740
-110.660
-113.700
-116.610
-119.360
-121.760
-124.120
-126.170
-128.150
-130.160
-131.900
-133.870
-148.980
-164.480
178.130
160.780
148.940
141.520
129.890
-60.600
-71.580
-79.740
-88.330
-95.930
-102.980
-109.520
-115.520
-120.920
-125.900
-130.650
-134.810
-139.040
-142.830
-146.280
-149.330
-152.720
-155.590
-158.550
-161.160
-163.570
-166.360
-168.460
-170.910
-172.740
-175.220
166.850
148.860
130.020
109.390
91.190
65.480
-11.550
137.750
129.900
122.830
116.180
109.940
103.930
98.390
92.970
88.080
83.310
78.720
74.510
70.220
66.290
62.310
59.030
55.200
51.910
48.650
45.510
42.540
39.490
36.680
33.920
31.330
28.650
5.030
-18.490
-43.500
-69.890
-93.950
-121.200
-164.010
-10.380
-13.150
-13.840
-15.830
-14.660
-17.220
-20.380
-20.140
-31.630
-38.100
-46.420
-52.210
-71.340
-78.610
-114.740
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
.
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