HWL34YRA
L-Band GaAs Power FET
Autumn 2002 V1
Features
•
•
•
•
Outline Dimensions
Low Cost GaAs Power FET
Class A or Class AB Operation
14.5 dB Typical Gain at 2.4GHz
5V to 10V Operation
Description
The HWL34YRA is a Power GaAs FET designed for
various L-band & S-band applications.
offered in low cost ceramic package.
It is presently
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
6mA
175
°
C
-65 to +175
°
C
12W
RA Package (Ceramic)
mounted on an infinite heat sink.
Electrical Specifications
(T
A
=25
°
C) f =2400 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=60mA
Transconductance at V
DS
=3V, I
D
=600mA
Thermal Resistance
Power Output at Test Points
V
DS
=10V, I
D
= 0.5Idss
Gain at 1dB Compression Point
V
DS
=10V, I
D
= 0.5Idss
Power-Added Efficiency (P
out
= P
1dB
)
V
DS
=10V, I
D
= 0.5Idss
Units
mA
V
mS
°
C/W
dBm
dB
%
Min.
900
-3.5
-
-
33
13.5
35
Typ.
1200
-2.0
700
9
34
14.5
45
Max.
1600
-1.5
-
12
-
-
-
g
m
R
th
P
1dB
G
1dB
PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL34YRA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°C
°
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
35
30
25
20
15
Gain
10
5
0
0
4
8
12
16
20
24
30
20
10
0
Pin (dBm)
Po
Gain
Eff
PAE (%)
50
40
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
35
30
25
20
30
Gain
15
10
5
0
0
4
8
12
16
20
24
20
10
0
Pin (dBm)
PAE (%)
60
50
Po
40
Eff
Gain
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL34YRA
L-Band GaAs Power FET
Autumn 2002 V1
Power Derating Curve
16
Total Power Dissipation,P
T
(W)
(25,12.0)
12
8
4
(175,0)
0
0
50
100
150
200
Case Temperature,T
C
(℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL34YRA
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
V
DS
=10V, I
DS
=0.5I
DSS
(GHz)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
lS11l
0.947
0.949
0.927
0.931
0.930
0.934
0.929
0.930
0.927
0.926
0.924
0.925
0.929
0.928
0.923
0.936
0.924
0.927
0.929
0.930
0.927
0.933
0.932
0.929
0.935
0.935
0.934
0.939
0.935
0.931
0.931
0.939
0.934
0.939
0.939
0.938
∠
ANG
-130.684
-142.198
-152.271
-160.245
-167.066
-173.566
-179.133
175.811
171.215
167.036
162.831
158.511
155.145
152.195
148.836
145.751
142.432
139.764
136.975
134.915
131.630
129.386
127.241
125.386
122.879
120.597
118.987
116.922
114.958
113.530
111.453
109.845
108.557
106.654
105.303
103.525
lS21l
11.604
10.210
8.674
7.616
6.801
6.168
5.472
4.965
4.528
4.141
3.818
3.553
3.306
3.053
2.852
2.675
2.506
2.356
2.211
2.076
1.963
1.874
1.756
1.665
1.578
1.497
1.427
1.358
1.304
1.254
1.202
1.157
1.120
1.086
1.039
1.015
∠
ANG
99.353
91.564
84.882
78.087
73.266
67.037
63.127
57.754
53.779
49.641
45.231
41.565
37.733
34.226
30.512
27.311
23.576
20.349
17.260
14.278
10.858
8.107
5.346
2.538
-0.146
-3.033
-5.365
-8.017
-10.711
-12.885
-15.654
-17.709
-20.278
-22.849
-24.926
-27.027
lS12l
0.014
0.013
0.016
0.014
0.016
0.022
0.015
0.016
0.015
0.016
0.017
0.016
0.016
0.016
0.017
0.015
0.014
0.015
0.015
0.015
0.014
0.014
0.014
0.014
0.013
0.012
0.012
0.015
0.012
0.013
0.014
0.011
0.012
0.013
0.012
0.013
∠
ANG
30.593
16.744
18.392
11.917
11.796
3.037
8.597
-0.436
2.559
-1.229
-8.179
-9.085
-9.257
-10.604
-17.858
-11.779
-19.614
-17.051
-22.120
-18.382
-25.142
-22.983
-29.044
-19.682
-29.826
-49.463
-29.255
-14.167
-32.211
-28.065
-26.944
-42.929
-28.638
-16.919
-35.426
-28.487
lS22l
0.254
0.270
0.299
0.321
0.331
0.351
0.369
0.386
0.399
0.421
0.430
0.441
0.457
0.476
0.483
0.504
0.512
0.529
0.540
0.550
0.563
0.588
0.583
0.597
0.606
0.613
0.622
0.631
0.639
0.645
0.659
0.662
0.675
0.666
0.683
0.691
∠
ANG
-131.689
-131.001
-138.530
-141.943
-144.778
-147.447
-151.567
-153.251
-155.880
-158.172
-160.732
-162.681
-165.441
-166.853
-169.223
-170.146
-172.408
-174.536
-175.615
-176.656
-178.245
-179.669
179.190
178.052
176.436
175.600
174.679
173.081
171.960
171.700
170.094
168.398
168.044
164.745
166.180
165.577
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
