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HWL36YRF

L-Band GaAs Power FET

器件类别:分立半导体    晶体管   

厂商名称:Hexawave

厂商官网:http://www.hw.com.tw

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Hexawave
包装说明
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
JESD-30 代码
R-CDFM-F2
湿度敏感等级
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
225
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
HWL36YRF
L-Band GaAs Power FET
Autumn 2002 V1
Features
Low Cost GaAs Power FET
Class A or Class AB Operation
Typical 13 dB Gain
5V to 10V Operation
Outline Dimensions
Description
The HWL36YRF is a Power GaAs FET designed
for various L-band & S-band applications.
It is
presently offered in low cost ceramic package.
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
10mA
175
°
C
-65 to +175
°
C
15W
RF Package (Ceramic)
mounted on an infinite heat sink.
Electrical Specifications
(T
A
=25
°
C) f = 2400 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=5V, V
GS
=0V
Pinch-off Voltage at V
DS
=5V, I
D
=100mA
Transconductance at V
DS
=5V, I
D
=1000mA
Thermal Resistance, Channel to case*
Power Output at Test Points
V
DS
=10V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5I
DSS
Power-Added Efficiency (P
out
= P
1dB
)
V
DS
=10V, I
D
=0.5I
DSS
Units
mA
V
mS
°
C/W
dBm
dB
%
Min.
1700
-3.5
-
-
35
12
35
Typ.
2000
-2.0
1000
7
36
13
42
Max.
2600
-1.5
-
10
-
-
-
g
m
R
th
P
1dB
G
1dB
PAE
*
Device mounted on an infinite heat sink.
Typical Performance at 25
°
C
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL36YRF
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
50
30
40
20
Gain
10
10
0
0
5
10
15
20
25
0
Pin (dBm)
30
20
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
50
30
40
20
Gain
10
10
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
0
Pin (dBm)
30
20
Po
Gain
Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL36YRF
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
V
DS
=10V, I
DS
=0.5I
DSS
(GHz)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
lS11l
0.973
0.969
0.962
0.958
0.956
0.959
0.956
0.954
0.953
0.954
0.949
0.951
0.952
0.951
0.949
0.951
0.947
0.946
0.947
0.947
0.946
0.950
0.952
0.953
0.953
0.947
0.953
0.951
0.947
0.949
0.946
0.953
0.957
0.957
0.957
0.957
ANG
-143.146
-153.426
-161.504
-168.227
-173.554
-178.592
176.875
172.884
169.241
165.452
162.381
159.244
156.395
153.692
151.022
148.408
146.219
144.021
141.988
139.849
137.624
136.194
134.364
132.441
130.400
128.579
127.064
125.351
123.876
122.347
121.140
119.590
118.198
116.744
115.213
113.657
lS21l
9.497
7.992
6.887
5.964
5.301
4.769
4.322
3.901
3.568
3.298
3.030
2.810
2.620
2.453
2.298
2.166
2.032
1.923
1.818
1.723
1.632
1.558
1.486
1.416
1.359
1.295
1.246
1.202
1.155
1.114
1.081
1.043
1.010
0.978
0.946
0.920
ANG
95.707
88.677
83.152
77.929
73.270
68.292
64.671
60.520
56.704
52.680
49.241
45.995
42.812
39.857
36.568
33.358
30.228
27.476
24.535
21.789
18.738
16.360
13.796
11.277
8.642
6.031
3.677
1.286
-0.969
-3.604
-5.711
-8.334
-10.611
-12.836
-14.884
-17.216
lS12l
0.014
0.014
0.014
0.014
0.015
0.014
0.014
0.013
0.013
0.014
0.013
0.014
0.013
0.014
0.013
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.012
0.012
0.012
0.012
0.012
0.012
0.011
0.011
0.011
0.011
0.012
0.012
ANG
17.597
9.117
6.912
1.489
3.030
0.832
-3.459
-7.050
-7.716
-10.230
-9.909
-11.405
-13.388
-12.553
-14.102
-18.172
-19.352
-19.314
-17.675
-20.781
-22.772
-19.020
-24.484
-23.643
-24.168
-23.039
-24.243
-23.444
-24.499
-27.134
-22.681
-22.894
-30.031
-26.886
-25.404
-29.596
lS22l
0.512
0.524
0.526
0.533
0.530
0.534
0.538
0.541
0.545
0.546
0.550
0.559
0.565
0.578
0.582
0.593
0.595
0.606
0.608
0.617
0.624
0.633
0.638
0.641
0.646
0.653
0.660
0.671
0.675
0.682
0.687
0.692
0.697
0.702
0.699
0.705
ANG
-174.520
-176.193
-178.989
179.097
178.612
176.192
174.649
173.694
172.614
171.105
170.714
169.706
168.753
167.846
166.919
165.732
164.690
163.840
162.762
162.294
160.420
159.952
159.485
159.083
158.175
157.337
157.066
156.212
155.475
154.126
153.258
152.397
151.238
150.539
149.918
149.071
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
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