DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA92, 10 X 20 MM, MO-207DL-Z, FBGA-92
厂商名称:Infineon(英飞凌)
下载文档型号 | HYB18T1G160AC-3S | HYB18T1G400AC-3S | HYB18T1G400AC-3 | HYB18T1G160AC-3 | HYB18T1G800AC-3S | HYB18T1G800AC-3 |
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描述 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA92, 10 X 20 MM, MO-207DL-Z, FBGA-92 | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA68, 10 X 20 MM, MO-207DM-Z, FBGA-68 | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA68, 10 X 20 MM, MO-207DM-Z, FBGA-68 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA92, 10 X 20 MM, MO-207DL-Z, FBGA-92 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, 10 X 20 MM, MO-207DM-Z, FBGA-68 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, 10 X 20 MM, MO-207DM-Z, FBGA-68 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
零件包装代码 | DSBGA | DSBGA | DSBGA | DSBGA | DSBGA | DSBGA |
包装说明 | FBGA, | FBGA, | FBGA, | FBGA, | FBGA, | FBGA, |
针数 | 92 | 68 | 68 | 92 | 68 | 68 |
Reach Compliance Code | unknown | unknown | compliant | compliant | unknown | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PBGA-B92 | R-PBGA-B68 | R-PBGA-B68 | R-PBGA-B92 | R-PBGA-B68 | R-PBGA-B68 |
长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm |
内存密度 | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 16 | 4 | 4 | 16 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 92 | 68 | 68 | 92 | 68 | 68 |
字数 | 67108864 words | 268435456 words | 268435456 words | 67108864 words | 134217728 words | 134217728 words |
字数代码 | 64000000 | 256000000 | 256000000 | 64000000 | 128000000 | 128000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 64MX16 | 256MX4 | 256MX4 | 64MX16 | 128MX8 | 128MX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | FBGA | FBGA | FBGA | FBGA | FBGA | FBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm |