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HYM7V65801ATFG-10S

Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168

器件类别:存储    存储   

厂商名称:SK Hynix(海力士)

厂商官网:http://www.hynix.com/eng/

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器件参数
参数名称
属性值
厂商名称
SK Hynix(海力士)
零件包装代码
DIMM
包装说明
,
针数
168
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
6 ns
JESD-30 代码
R-XDMA-N168
内存密度
536870912 bit
内存集成电路类型
SYNCHRONOUS DRAM MODULE
内存宽度
64
功能数量
1
端口数量
1
端子数量
168
字数
8388608 words
字数代码
8000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
8MX64
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
认证状态
Not Qualified
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子形式
NO LEAD
端子位置
DUAL
文档预览
8Mx64 bit SDRAM Unbuffered DIMM F-Series
PC/100 SDRAM Specification Supporting
based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh
HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65A
DESCRIPTION
The HYM7V65800A/ 65801A/ 65830A/ 65831A F-Series are high speed 3.3-Volt synchronous dynamic
RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
E
2
PROM on a 168-pin glass-epoxy printed circuit board. A 0.33µF and 0.1µF decoupling capacitors per each
SDRAM are mounted on the module.
The HYM7V65800A/ 65801A/ 65830A/ 65831A F-Series are gold plated socket type Dual In-line Memory
Modules suitable for easy interchange and addition of 64M bytes memory. All addresses, data and control
inputs are latched on the rising edge of the master clock input. The data paths are internally pipelined to
achieve very high bandwidths.
FEATURES
1.375” (34.93mm) PCB Height
168-Pin Unbuffered DIMM with Single Sided
One 0.33µF and one 0.1µF decoupling
capacitors adopted
Serial Presence Detect with Serial E
2
PROM
Meets all the other JEDEC specifications
Single 3.3V±0.3V power supply
All device pins are LVTTL compatible
4096 refresh cycles every 64ms or 8192 refresh
cycles every 128ms
Fully synchronous ; all inputs referenced to
positive edge of system clock
Dual or Quad internal banks with single pulsed
/RAS
Auto precharge/precharge all banks by A
10
flag
Possible to assert random column address
every clock cycle
Interleaved auto refresh mode
Programmable burst lengths and sequences
- 1,2,4,8,full page for Sequential type
- 1,2,4,8 for Interleave type
Programmable /CAS latency ; 2,3 clocks
Support clock suspend/power down mode by
CKE0
Data mask function by DQM
Mode register set programming
Burst termination command
Self refresh provides minimum power, full
internal refresh control
ORDERING INFORMATION
Part No.
HYM7V65800ATFG - 8/10P/10S
HYM7V65801ATFG - 8/10P/10S
HYM7V65830ATFG - 8/10P/10S
HYM7V65831ATFG - 8/10P/10S
Max. Frequency
125/ 100/ 100 MHz
125/ 100/ 100 MHz
125/ 100/ 100 MHz
125/ 100/ 100 MHz
SDRAM Bank
2 Banks
4 Banks
2 Banks
4 Banks
Ref.
4K
4K
8K
8K
Package
TSOPII
TSOPII
TSOPII
TSOPII
Plating
Gold
Gold
Gold
Gold
BASED COMPONENTS
Module Part No.
HYM7V65800ATFG
HYM7V65801ATFG
Based Comp. Part No.
HY57V658010ATC
HY57V658020ATC
Module Part No.
HYM7V65830ATFG
HYM7V65831ATFG
Based Comp. Part No.
HY57V648010ATC
HY57V648020ATC
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Oct. 1998
Rev 9.1
HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65831A F-Series
PIN DESCRIPTION
Pin Name
CK0-CK3
Pin Type
INPUT
Description
System Clock Input; All other inputs except CKE are registered
to the SDRAM on the rising edge of CLK.
Clock Enable; Controls internal clock signal and when deactiva-
ted, the SDRAM will be either one of the states among power
down, suspend, or self refresh.
Chip select; Functions command mask(NOP).
Row address strobe
Column address strobe
Write Enable
Data Input / Output Mask
Data Input / Output; Include inputs, outputs, or Hi-z state.
Power Supplies; 3.3V±0.3V
Ground
Serial Address and Data Input / Output.
Serial Clock
Addresses in Serial E
2
PROM for Socket Presence.
CKE0
/S0, /S2
/RAS
/CAS
/WE
DQM0-7
DQ0-DQ63
V
CC
V
SS
SDA
SCL
SA0-SA2
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT/
OUTPUT
SUPPLY
SUPPLY
INPUT/
OUTPUT
INPUT
INPUT
HYM7V65800A/HYM7V65830A F-Series ( 2Bank 8Mx8 SDRAM Based )
Pin Name
BA0
Pin Type
INPUT
Description
Bank select address inputs; Select one of dual banks during
both /RAS and /CAS activity.
Address Inputs;
A0-A8; X&Y addresses
A10; Precharge flag, A9-A12; X addresses only.
A0-A12
INPUT
HYM7V65801A/HYM7V65831A F-Series ( 4Bank 8Mx8 SDRAM Based )
Pin Name
BA0, BA1
Pin Type
INPUT
Description
Bank address inputs; Select one of quad banks during both
/RAS and /CAS activity.
Address Inputs;
A0-A8; X&Y addresses
A10; Precharge flag, A9-A11; X addresses only.
A0-A11
INPUT
Rev 9.1
2
HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65831A F-Series
PIN NAME
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
NAME
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
NC
NC
Vss
NC
NC
Vcc
/WE
DQM0
DQM1
/S0
NC
Vss
A0
A2
A4
A6
A8
A10(AP)
* BA1
Vcc
Vcc
CK0
#
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
NAME
Vss
NC
/S2
DQM2
DQM3
NC
Vcc
NC
NC
NC
NC
Vss
DQ16
DQ17
DQ18
DQ19
Vcc
DQ20
NC
NC
NC
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
CK2
NC
WP
SDA
SCL
Vcc
#
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
NAME
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
NC
NC
Vss
NC
NC
Vcc
/CAS
DQM4
DQM5
NC
/RAS
Vss
A1
A3
A5
A7
A9
BA0
A11
Vcc
*CK1
* A12
#
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
NAME
Vss
CKE0
NC
DQM6
DQM7
NC
Vcc
NC
NC
NC
NC
Vss
DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
*CK3
NC
SA0
SA1
SA2
Vcc
Note : 1. BA1 is used for HYM7V65801A/HYM7V65831A F-Series ( 4 Bank 8Mx8 Based )
2. A12 is used for HYM7V65800A/HYM7V65830A F-Series ( 2 Bank 8Mx8 Based )
3. CK1 and CK3 are connected with termination R/C ( Refer to the block diagram )
3
Rev 9.1
HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65831A F-Series
BLOCK DIAGRAM
Note : 1. The serial resistor values of DQs are 10 Ohms.
2. The padding capacitance of termination R/C for CK1/3 is 10pF.
Rev 9.1
4
HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65831A F-Series
I-
1
SERIAL PRESENCE DETECT
BYTE
NUMBER
FUNCTION
DESCRIBED
[ HYM7V65800A/HYM7V65830A F-Series; 2 Banks ]
-8
FUNCTION
-10P
-10S
-8
VALUE
-10P -10S
NOTE
BYTE0
BYTE1
BYTE2
BYTE3
BYTE4
BYTE5
BYTE6
BYTE7
BYTE8
BYTE9
BYTE10
BYTE11
BYTE12
BYTE13
BYTE14
BYTE15
BYTE16
BYTE17
BYTE18
BYTE19
BYTE20
BYTE21
# of Bytes Written into Serial Memory
at Module Manufacturer
Total # of Bytes of SPD Memory Device
Fundamental Memory Type
# of Row Addresses on This Assembly
# of Column Addresses on This Assembly
# of Module Banks on This Assembly
Data Width of This Assembly
Data Width of This Assembly (Continued)
Voltage Interface Standard of This Assembly
SDRAM Cycle Time
@
/CAS Latency=3
Access Time from Clock
@
/CAS Latency=3
DIMM Configuration Type
Refresh Rate/Type
Primary SDRAM Width
Error Checking SDRAM Width
Minimum Clock Delay Back to Back Random
Column Address
Burst Lengths Supported
# of Banks on SDRAM Device
CAS # Latency
CS # Latency
Write Latency
SDRAM Module Attributes
8ns
6ns
128 Bytes
256 Bytes
SDRAM
2 Banks; 13
9
1 Bank
64 Bits
-
LVTTL
10ns
6ns
None
15.625µs
/ Self Refresh Supported
80h
08h
04h
0Dh
09h
01h
40h
00h
01h
10ns
6ns
80h
60h
A0h
60h
00h
80h
08h
00h
01h
8Fh
02h
06h
01h
01h
00h
2
A0h
60h
1
x8
None
t
CCD
=1 Latency
1,2,4,8,Full Page
2 Banks
/CAS Latency=2,3
/CS Latency=0
/WE Latency=0
Neither Buffered nor
Registered
+/-10% voltage
tolerance, Burst read,
Precharge all, Auto
precharge
10ns 10ns 12ns
6ns
6ns
6ns
-
-
-
-
-
-
20ns 20ns 20ns
16ns 20ns 20ns
20ns 20ns 20ns
48ns 50ns 50ns
64MB
2ns
2ns
2ns
1ns
1ns
1ns
2ns
2ns
2ns
1ns
1ns
1ns
BYTE22
BYTE23
BYTE24
BYTE25
BYTE26
BYTE27
BYTE28
BYTE29
BYTE30
BYTE31
BYTE32
BYTE33
BYTE34
BYTE35
SDRAM Module Attributes, General
SDRAM Cycle Time
@
/CAS Latency=2
Access Time from Clock @ /CAS Latency=2
SDRAM Cycle Time @ /CAS Latency=1
Access Time from Clock @ /CAS Latency=1
Minimum Row Precharge Time (t
RP
)
Minimum Row Active to Row Active Delay (t
RRD
)
Minimum /RAS to /CAS Delay (t
RCD
)
Minimum /RAS Pulse width (t
RAS
)
Module Bank Density
Command & Address signal input setup time (t
AS
)
Command & Address signal input hold time (t
AH
)
Data signal input setup time (t
DS
)
Data signal input hold time (t
DH
)
06h
A0h
60h
00h
00h
14h
10h
14h
30h
20h
10h
20h
10h
A0h
60h
00h
00h
14h
14h
14h
32h
10h
20h
10h
20h
10h
C0h
60h
00h
00h
14h
14h
14h
32h
20h
10h
20h
10h
5
Rev 9.1
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