IC62C256-45TI,IC62C256-45TI pdf中文资料,IC62C256-45TI引脚图,IC62C256-45TI电路-Datasheet-电子工程世界

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.EATURES

32K x 8 LOW POWER CMOS STATIC RAM

Access time: 45, 70 ns

Low active power: 200 mW (typical)

Low standby power

250 µW (typical) CMOS standby

28 mW (typical) TTL standby

.ully static operation: no clock or refresh

required

TTL compatible inputs and outputs

Single 5V power supply

DESCRIPTION

The

1+51

IC62C256 is a low power, 32,768 word by 8-bit

CMOS static RAM. It is fabricated using

1+51

's high-

performance, low power CMOS technology.

When

is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

250 µW (typical) at CMOS input levels.

Easy memory expansion is provided by using an active LOW

Chip Select (CS) input and an active LOW Output Enable (OE)

input. The active LOW Write Enable (WE) controls both writing

and reading of the memory.

The IC62C256 is pin compatible with other 32K x 8 SRAMs in

330mil SOP or 8*13.4mm TSOP-1 package.

.UNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

32K X 8

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

Integrated Circuit Solution Inc.

ALSR010-0A 05/23/2001

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PIN CON.IGURATION

28-Pin SOP

A14

A12

I/O0

I/O1

I/O2

GND

VCC

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

PIN CON.IGURATION

8x13.4mm TSOP-1

A11

A13

VCC

A14

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

PIN DESCRIPTIONS

A0-A14

I/O0-I/O7

Vcc

GND

Address Inputs

Chip Select Input

Output Enable Input

Write Enable Input

Input/Output

Power

Ground

TRUTH TABLE

Mode

Not Selected

(Power-down)

Output Disabled

Read

Write

I/O Operation

High-Z

OUT

Vcc Current

, I

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

TERM

BIAS

STG

OUT

Parameter

Terminal Voltage with Respect to GND

Temperature Under Bias

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

0.5 to +7.0

55 to +125

65 to +150

Unit

°C

0.5

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Integrated Circuit Solution Inc.

ALSR010-0A 05/23/2001

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OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

40°C to +85°C

5V ± 10%

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input Leakage

Output Leakage

Test Conditions

= Min., I

= 1.0 mA

= Min., I

= 2.1 mA

Min.

2.4

2.2

0.3

Com.

Ind.

Com.

Ind.

Max.

0.4

+ 0.5

0.8

Unit

µA

GND

≤

GND

≤

OUT

≤

Outputs Disabled

Note:

1. V

+3.0V for pulse width less than 10ns.

2. V

= 3.0V for pulse width less than 10 ns.

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol

Parameter

Vcc Operating

Supply Current

Vcc Dynamic Operating

Supply Current

TTL Standby Current

(TTL Inputs)

CMOS Standby

Current (CMOS Inputs)

Test Conditions

= Max.,

= V

OUT

= 0 mA, f = 0

= Max.,

= V

OUT

= 0 mA, f = f

MAX

= Max.,

= V

or V

≥

, f = 0

= Max.,

≥

0.2V,

≥

0.2V, or

≤

0.2V, f = 0

-45 ns

Min. Max.

0.5

1.0

-70 ns

Min. Max.

0.5

1.0

Unit

Com.

Ind.

Com.

Ind.

Com.

Ind.

Com.

Ind.

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE

(1,2)

Symbol

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

= 0V

OUT

= 0V

Max.

Unit

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 5.0V.

Integrated Circuit Solution Inc.

ALSR010-0A 05/23/2001

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READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

Symbol

Parameter

Read Cycle Time

Address Access Time

Output Hold Time

Access Time

-45 ns

Min. Max.

-70 ns

Min.

Max.

Unit

OHA

ACS

DOE

LZOE

to Low-Z Output

HZOE

to High-Z Output

LZCS

to Low-Z Output

HZCS

to High-Z Output

to Power-Up

to Power-Down

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

and output loading specified in .igure 1.

2. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and .all Times

Input and Output Timing

and Reference Levels

Output Load

Unit

0V to 3.0V

3 ns

1.5V

See .igures 1 and 2

AC TEST LOADS

480

Ω

480

Ω

OUTPUT

100 pF

Including

jig and

scope

255

Ω

OUTPUT

5 pF

Including

jig and

scope

255

Ω

.igure 1.

.igure 2.

Integrated Circuit Solution Inc.

ALSR010-0A 05/23/2001

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AC WAVE.ORMS

READ CYCLE NO. 1

(1,2)

ADDRESS

OHA

OUT

PREVIOUS DATA VALID

OHA

DATA VALID

READ CYCLE NO. 2

(1,3)

ADDRESS

OHA

DOE

HZOE

LZOE

ACS

LZCS

HZCS

DATA VALID

OUT

HIGH-Z

Notes:

is HIGH for a Read Cycle.

2. The device is continuously selected.

OE, CS

= V

3. Address is valid prior to or coincident with

LOW transitions.

Integrated Circuit Solution Inc.

ALSR010-0A 05/23/2001

参数对比

与IC62C256-45TI相近的元器件有：IC62C256-45UI、IC62C256-45T、IC62C256-45U、IC62C256-70T、IC62C256-70TI、IC62C256-70U、IC62C256-70UI。描述及对比如下：

型号	IC62C256-45TI	IC62C256-45UI	IC62C256-45T	IC62C256-45U	IC62C256-70T	IC62C256-70TI	IC62C256-70U	IC62C256-70UI
描述	Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP-28	Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
包装说明	8 X 13.40 MM, TSOP1-28	0.330 INCH, SOP-28	8 X 13.40 MM, TSOP1-28	0.330 INCH, SOP-28	8 X 13.40 MM, TSOP1-28	8 X 13.40 MM, TSOP1-28	0.330 INCH, SOP-28	0.330 INCH, SOP-28
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	45 ns	45 ns	45 ns	45 ns	70 ns	70 ns	70 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	SOP	TSOP1	SOP	TSOP1	TSOP1	SOP	SOP
封装等效代码	TSSOP28,.53,22	SOP28,.5	TSSOP28,.53,22	SOP28,.5	TSSOP28,.53,22	TSSOP28,.53,22	SOP28,.5	SOP28,.5
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.0005 A	0.0005 A	0.00025 A	0.00025 A	0.00025 A	0.0005 A	0.00025 A	0.0005 A
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最大压摆率	0.08 mA	0.08 mA	0.07 mA	0.07 mA	0.065 mA	0.075 mA	0.065 mA	0.075 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.55 mm	1.27 mm	0.55 mm	1.27 mm	0.55 mm	0.55 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL