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ICS83947AYI-147T

Low Skew Clock Driver, 83947 Series, 9 True Output(s), 0 Inverted Output(s), PQFP32, 7 X 7 MM, 1.40 MM HEIGHT, MS-026, LQFP-32

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
LQFP, QFP32,.35SQ,32
针数
32
Reach Compliance Code
not_compliant
其他特性
ALSO OPERATES AT 3.3V SUPPLY
系列
83947
输入调节
MUX
JESD-30 代码
S-PQFP-G32
JESD-609代码
e0
长度
7 mm
逻辑集成电路类型
LOW SKEW CLOCK DRIVER
最大I(ol)
0.02 A
湿度敏感等级
3
功能数量
1
反相输出次数
端子数量
32
实输出次数
9
最高工作温度
85 °C
最低工作温度
-40 °C
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP32,.35SQ,32
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE
峰值回流温度(摄氏度)
240
电源
3.3 V
Prop。Delay @ Nom-Sup
4.5 ns
传播延迟(tpd)
4.5 ns
认证状态
Not Qualified
Same Edge Skew-Max(tskwd)
0.13 ns
座面最大高度
1.6 mm
最大供电电压 (Vsup)
2.625 V
最小供电电压 (Vsup)
2.375 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.8 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
20
宽度
7 mm
Base Number Matches
1
文档预览
Integrated
Circuit
Systems, Inc.
ICS83947I-147
L
OW
S
KEW
, 1-
TO
-9
LVCMOS/LVTTL F
ANOUT
B
UFFER
F
EATURES
9 LVCMOS/LVTTL outputs
Selectable CLK0 and CLK1 can accept the following
input levels: LVCMOS and LVTTL
Maximum output frequency: 250MHz
Output skew: 115ps (maximum)
Part-to-part skew: 500ps (maximum)
Additive phase jitter, RMS: 0.02ps (typical) @ 3.3V
Full 3.3V or 2.5V operating supply
-40°C to 85°C ambient operating temperature
Pin compatible with the MPC947
G
ENERAL
D
ESCRIPTION
The ICS83947I-147 is a low skew, 1-to-9
LVCMOS/LVTTL Fanout Buffer and a member of
HiPerClockS™
the HiPerClockS™ family of High Performance
Clock Solutions from ICS. The low impedance
LVCMOS/LVTTL outputs are designed to drive 50Ω
series or parallel terminated transmission lines. The effective
fanout can be increased from 9 to 18 by utilizing the ability of
the outputs to drive two series terminated lines.
ICS
Guaranteed output and part-to-part skew characteristics make
the ICS83947I-147 ideal for high performance, 3.3V or 2.5V
single ended applications.
B
LOCK
D
IAGRAM
CLK_EN
D
Q
LE
CLK0
CLK1
0
P
IN
A
SSIGNMENT
GND
GND
GND
V
DDO
V
DDO
Q0
Q1
Q2
32 31 30 29 28 27 26 25
Q0
GND
CLK_SEL
Q1
CLK0
CLK1
CLK_EN
Q3
Q4
Q5
Q6
Q7
Q8
OE
V
DD
GND
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
GND
V
DDO
Q8
GND
Q7
V
DDO
Q6
GND
24
23
22
GND
Q3
V
DDO
Q4
GND
Q5
V
DDO
GND
1
CLK_SEL
Q2
ICS83947I-147
21
20
19
18
17
32-Lead LQFP
7mm x 7mm x 1.4mm package body
Y Package
Top View
OE
83947AYI-147
http://www.icst.com/products/hiperclocks.html
1
REV. A SEPTEMBER 24, 2004
Integrated
Circuit
Systems, Inc.
ICS83947I-147
L
OW
S
KEW
, 1-
TO
-9
LVCMOS/LVTTL F
ANOUT
B
UFFER
Name
GND
Type
Power
Input
Input
Input
Input
Power
Pullup
Description
Power supply ground.
Clock select input. When HIGH, selects CLK1. When LOW,
selects CLK0. LVCMOS / LVTTL interface levels.
Pullup Reference clock inputs. LVCMOS / LVTTL interface levels.
T
ABLE
1. P
IN
D
ESCRIPTIONS
Number
1, 8, 9, 12, 16, 17,
20, 24, 25, 29, 32
2
3, 4
5
6
7
CLK_SEL
CLK0, CLK1
CLK_EN
OE
V
DD
Pullup Clock enable. LVCMOS / LVTTL interface levels.
Pullup Output enable. LVCMOS / LVTTL interface levels.
Core supply pin.
10, 14, 18, 22, 27, 31
V
DDO
Power
Output supply pins.
Q0 thru Q8 clock outputs.
11, 13, 15, 19, 21,
Q8, Q7, Q6, Q5,
Output
23, 26, 28, 30
Q4, Q3, Q2, Q1, Q0
LVCMOS / LVTTL interface levels.
NOTE:
Pullup
refers to internal input resistors. See Table 2, Pin Characteristics, for typical values.
T
ABLE
2. P
IN
C
HARACTERISTICS
Symbol
C
IN
C
PD
R
PULLUP
R
OUT
Parameter
Input Capacitance
Power Dissipation Capacitance
(per output)
Input Pullup Resistor
Output Impedance
Test Conditions
Minimum
Typical
4
12
51
7
Maximum
Units
pF
pF
KΩ
T
ABLE
3. O
UTPUT
E
NABLE
Control Inputs
OE
0
1
1
CLK_EN
X
0
1
AND
C
LOCK
E
NABLE
F
UNCTION
T
ABLE
Output
Q0:Q8
Hi-Z
LOW
Follows CLK input
83947AYI-147
http://www.icst.com/products/hiperclocks.html
2
REV. A SEPTEMBER 24, 2004
Integrated
Circuit
Systems, Inc.
ICS83947I-147
L
OW
S
KEW
, 1-
TO
-9
LVCMOS/LVTTL F
ANOUT
B
UFFER
4.6V
-0.5V to V
DD
+ 0.5 V
-0.5V to V
DDO
+ 0.5V
47.9°C/W (0 lfpm)
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the
DC Characteristics
or
AC Character-
istics
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
A
BSOLUTE
M
AXIMUM
R
ATINGS
Supply Voltage, V
DD
Inputs, V
I
Outputs, V
O
Package Thermal Impedance,
θ
JA
Storage Temperature, T
STG
T
ABLE
4A. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±0.3V
OR
2.5V±5%, T
A
= -40°C
TO
85°C
Symbol Parameter
V
DD
V
DDO
I
DD
I
DDO
Core Supply Voltage
Output Supply Voltage
Input Supply Current
Output Supply Current
Test Conditions
Minimum
3.0
2.375
3.0
2.375
Typical
3.3
2.5
3.3
2.5
Maximum
3.6
2.625
3.6
2.625
50
9
Units
V
V
V
V
mA
mA
T
ABLE
4B. LVCMOS/LVTTL DC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±0.3V, T
A
= -40°C
TO
85°C
Symbol Parameter
V
IH
V
IL
I
IN
V
OH
Input High Voltage
Input Low Voltage
Input Current
CLK0, CLK1, OE,
CLK_SEL, CLK_EN
I
OH
= -20mA
-100
2.5
Test Conditions
Minimum
2
Typical
Maximum
3.6
0.8
Units
V
V
µA
V
Output High Voltage; NOTE 1
V
OL
Output Low Voltage; NOTE 1
I
OL
= 20mA
0.4
V
NOTE 1: Outputs terminated with 50
to V
DDO
/2. See Parameter Measurement Information Section,
3.3V Output Load Test
Circuit Diagram.
T
ABLE
4B. LVCMOS/LVTTL DC C
HARACTERISTICS
,
V
DD
= V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol Parameter
V
IH
V
IL
I
IH
I
IL
V
OH
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
CLK0, CLK1
CLK_SEL, CLK_EN, OE
CLK0, CLK1, OE,
CLK_SEL, CLK_EN
CLK0, CLK1, OE,
CLK_SEL, CLK_EN
V
DD
= V
IN
= 2.625V
V
DD
= 32.625V,
V
IN
= 0V
-150
1.8
Test Conditions
Minimum
2
-0.3
-0.3
Typical
Maximum
V
DD
+ 0.3
1.3
0.8
5
Units
V
V
V
µA
µA
V
Output High Voltage; NOTE 1
V
OL
Output Low Voltage; NOTE 1
0.5
V
NOTE 1: Outputs terminated with 50
to V
DDO
/2. See Parameter Measurement Information Section,
2.5V Output Load Test
Circuit Diagram.
83947AYI-147
http://www.icst.com/products/hiperclocks.html
3
REV. A SEPTEMBER 24, 2004
Integrated
Circuit
Systems, Inc.
ICS83947I-147
L
OW
S
KEW
, 1-
TO
-9
LVCMOS/LVTTL F
ANOUT
B
UFFER
Test Conditions
f
250MHZ
Measured on
rising edge @V
DDO
/2
Measured on
rising edge @V
DDO
/2
(12KHz to 20MHz)
0.8V to 2.0V
f > 133MHz
f
133MHz
0.2
t
Period
/2 - 1
40
Minimum
2
Typical
Maximum
250
4. 2
115
500
Units
MHz
ns
ps
ps
ps
1
t
Period
/2 + 1
60
10
10
0
ns
ns
%
ns
ns
ns
T
ABLE
5A. AC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±0.3V, T
A
= -40°C
TO
85°C
Symbol Parameter
f
MAX
Output Frequency
t
PD
Propagation Delay, NOTE 1
Output Skew; NOTE 2, 5
Par t-to-Par t Skew; NOTE 3, 5
Buffer Additive Phase Jitter,
RMS; refer to Additive Phase
Jitter Section
Output Rise/Fall Time
Output Pulse Width
Output Duty Cycle
Output Enable Time; NOTE 4
Output Disable Time; NOTE 4
Clock Enable Setup Time
t
sk(o)
t
sk(pp)
tjit(Ø)
t
R
/ t
F
t
PW
odc
t
EN
t
DIS
t
S
0.2
Clock Enable Hold Time
1
ns
t
S
All parameters measured at frequencies less than or equal to 250MHz unless noted otherwise.
NOTE 1: Measured from V
DD
/2 of the input to V
DDO
/2 of the output.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at V
DDO
/2.
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages and with
equal load conditions. Using the same type of inputs on each device, the outputs are measured at V
DDO
/2.
NOTE 4: These parameters are guaranteed by characterization. Not tested in production.
NOTE 5: This parameter is defined in accordance with JEDEC Standard 65.
T
ABLE
5B. AC C
HARACTERISTICS
,
V
DD
= V
DDO
= 2.5V ± 5%, T
A
= -40°C
TO
85°C
Symbol Parameter
f
MAX
Output Frequency
t
PD
Propagation Delay, NOTE 1
Output Skew; NOTE 2, 5
Par t-to-Par t Skew; NOTE 3, 5
Buffer Additive Phase Jitter,
RMS; refer to Additive Phase
Jitter Section
Output Rise/Fall Time
Output Pulse Width
Output Enable Time; NOTE 4
Output Disable Time; NOTE 4
Clock Enable Setup Time
0
Test Conditions
f
250MHZ
Measured on
rising edge @V
DDO
/2
Measured on
rising edge @V
DDO
/2
(12KHz to 20MHz)
20% - 80%
300
t
Period
/2 - 1.2
Minimum
2.4
Typical
Maximum
250
4.5
130
600
0.1
800
t
Period
/2 + 1.2
10
10
Units
MHz
ns
ps
ps
ps
ps
ns
ns
ns
ns
t
sk(o)
t
sk(pp)
t
jit(Ø)
t
R
/ t
F
t
PW
t
EN
t
DIS
t
S
Clock Enable Hold Time
1
ns
t
S
All parameters measured at frequencies less than or equal to 250MHz unless noted otherwise.
NOTE 1: Measured from V
DD
/2 of the input to V
DDO
/2 of the output.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at V
DDO
/2.
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages and with
equal load conditions. Using the same type of inputs on each device, the outputs are measured at V
DDO
/2.
NOTE 4: These parameters are guaranteed by characterization. Not tested in production.
NOTE 5: This parameter is defined in accordance with JEDEC Standard 65.
83947AYI-147
http://www.icst.com/products/hiperclocks.html
4
REV. A SEPTEMBER 24, 2004
Integrated
Circuit
Systems, Inc.
ICS83947I-147
L
OW
S
KEW
, 1-
TO
-9
LVCMOS/LVTTL F
ANOUT
B
UFFER
A
DDITIVE
P
HASE
J
ITTER
the 1Hz band to the power in the fundamental. When the re-
quired offset is specified, the phase noise is called a
dBc
value,
which simply means dBm at a specified offset from the funda-
mental. By investigating jitter in the frequency domain, we get a
better understanding of its effects on the desired application over
the entire time record of the signal. It is mathematically possible
to calculate an expected bit error rate given a phase noise plot.
The spectral purity in a band at a specific offset from the funda-
mental compared to the power of the fundamental is called the
dBc Phase Noise.
This value is normally expressed using a
Phase noise plot and is most often the specified plot in many
applications. Phase noise is defined as the ratio of the noise
power present in a 1Hz band at a specified offset from the fun-
damental frequency to the power value of the fundamental. This
ratio is expressed in decibels (dBm) or a ratio of the power in
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
-180
-190
1k
Additive Phase Jitter, RMS
@
156.25MHz (12KHz to 20MHz)
= 0.02ps typical @ 3.3V
SSB P
HASE
N
OISE
dBc/H
Z
10k
100k
1M
10M
100M
O
FFSET
F
ROM
C
ARRIER
F
REQUENCY
(H
Z
)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
-180
-190
1k
Additive Phase Jitter, RMS
@
156.25MHz (12KHz to 20MHz)
= 0.01ps typical @ 2.5V
SSB P
HASE
N
OISE
dBc/H
Z
10k
100k
1M
10M
100M
O
FFSET
F
ROM
C
ARRIER
F
REQUENCY
(H
Z
)
As with most timing specifications, phase noise measurements
have issues. The primary issue relates to the limitations of the
equipment. Often the noise floor of the equipment is higher than
the noise floor of the device. This is illustrated above. The de-
83947AYI-147
vice meets the noise floor of what is shown, but can actually be
lower. The phase noise is dependant on the input source and
measurement equipment.
REV. A SEPTEMBER 24, 2004
http://www.icst.com/products/hiperclocks.html
5
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