IDDD20G65C6
6
th
Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G
is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Q
c
x
V
F
. The CoolSiC™ Schottky diode
VG
has been designed to complement our
V and
V CoolMOS™ families, meeting the most stringent
application requirements in this voltage range.
Table 1
Parameter
V
RRM
Q
C
(V
R
= 400 V)
E
C
(V
R
= 400 V)
I
F
(T
C
≤
°C,
D
= 1)
V
F
(I
F
= 20 A,
T
j
= 25 °C)
Table 2
IDDD20G65C6
Key performance parameters
Value
650
26.8
5.3
20
1.25
Unit
V
nC
µJ
A
V
Pin 6-10
Pin 1-2: n.c.
Pin 3-5: Anode
Cathode
PG-HDSOP-10-1
Package information
Package
PG-HDSOP-10-1
Marking
D2065C6
Type / ordering Code
Pin 3-5
Pin 6-10: Cathode
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Q
c
x
V
F
)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Please read the Important Notice and Warnings at the end of this document
Rev. 2.0, 2018-02-06
Final Datasheet
6
th
Generation CoolSiC™
IDDD20G65C6
Table of Content
1
2
3
3.1
3.2
4
5
6
Maximum ratings ............................................................................................................................... 3
Thermal characteristics ..................................................................................................................... 3
Electrical characteristics .................................................................................................................... 4
Static characteristics ............................................................................................................................... 4
AC characteristics .................................................................................................................................... 4
Diagrams ............................................................................................................................................ 5
Simplified forward characteristic ....................................................................................................... 7
Package outlines ................................................................................................................................ 8
Final Datasheet
2
Rev. 2.0, 2018-02-06
6
th
Generation CoolSiC
TM
IDDD20G65C6
1
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Values
Min.
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
Max.
20
27
51
87
99
79
780
49
31
650
150
169
175
A²s
V
V/ns
W
°C
A
Unit
Note/Test condition
T
C
≤
145 °C,
D
= 1
T
C
≤
125 °C,
D
= 1
T
C
≤
°C,
D
= 1
Continuous forward current
Surge-repetitive forward current,
sine halfwave
1
Surge non-repetitive forward
current, sine halfwave
Non-repetitive peak forward
current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage
temperature
I
F
I
F,RM
I
F,SM
I
F,max
∫
i²dt
V
RRM
dv/dt
P
tot
T
j
T
stg
–
–
–
–
–
–
–
–
–
-55
T
C
= 25 °C,
t
p
= 10 ms
T
C
= 25 °C,
t
p
= 10 ms
T
C
= 150 °C,
t
p
= 10 ms
T
C
= 25 °C,
t
p
= 10 µs
T
C
= 25 °C,
t
p
= 10 ms
T
C
= 150 °C,
t
p
= 10 ms
T
C
= 25 °C
V
R
= 0..480 V
T
C
= 25°C,
R
thJC,max
–
2
Table 4
Parameter
Thermal characteristics
Thermal characteristics
Symbol
R
thJC
R
thJA
Values
Min.
–
–
Typ.
0.5
–
Max.
0.9
62
K/W
Unit
Note/Test condition
–
Device on PCB, minimal
footprint
Device on 40*40*1.5 mm
epoxy PCB FR4 (one layer,
70 µm thickness) with 6
cm
2
copper for cathode
connection and cooling,
PCB vertically placed
without air stream cooling
Allowed only reflow
soldering
Thermal resistance, junction-
case
Thermal resistance, junction-
ambient
Thermal resistance, junction-
ambient for SMD version
R
thJA
–
35
45
Soldering temperature
1
T
sold
–
–
260
°C
The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
Final Datasheet
3
Rev. 2.0, 2018-02-06
6
th
Generation CoolSiC
TM
IDDD20G65C6
3
3.1
Table 5
Parameter
Electrical characteristics
Static characteristics
Static characteristics
Symbol
V
DC
V
F
Values
Min.
650
–
–
–
–
–
Typ.
–
1.25
1.5
2.0
66
153
Max.
–
1.35
–
67
–
–
µA
V
Unit
Note/Test condition
T
j
= 25 °C
I
F
= 20 A,
T
j
= 25 °C
I
F
= 20 A,
T
j
= 150 °C
V
R
= 420 V,
T
j
= 25 °C
V
R
= 420 V,
T
j
= 125 °C
V
R
= 420 V,
T
j
= 150 °C
DC blocking voltage
Diode forward voltage
Reverse current
I
R
3.2
Table 6
Parameter
AC characteristics
AC characteristics
Symbol
Q
c
Values
Min.
–
–
Typ.
26.8
970
57
55
Max.
–
–
–
–
pF
Unit
nC
Note/Test Condition
V
R
= 400 V,
T
j
= 150 °C,
di/dt = 200 A/µs, I
F
≤ I
F,MAX
V
R
= 1 V,
f
= 1 MHz,
T
j
= 25 °C
V
R
= 300 V,
f
= 1 MHz,
T
j
= 25 °C
V
R
= 600 V,
f
= 1 MHz,
T
j
= 25 °C
Total capacitive charge
Total capacitance
C
–
–
Final Datasheet
4
Rev. 2.0, 2018-02-06
6
th
Generation CoolSiC
TM
IDDD20G65C6
4
Diagrams
P
tot
= f(T
C
)
Figure 1
Power dissipation
I
F
= f(T
C
);
R
thJC,max
;
T
j
≤
175 °C; parameter:
D
=
t
P
/T
Figure 2
Max. forward current
I
F
=
f(V
F
); t
p
= 10 µs; parameter:
T
j
Figure 3
Typ. forward characteristics
Figure 4
I
F
=
f(V
F
); t
p
= 10 µs; parameter:
T
j
Typ. forward characteristics
in surge current
Rev. 2.0, 2018-02-06
Final Datasheet
5
