IDW75E60
Fast Switching Emitter Controlled Diode
Features:
600V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175°C junction operating temperature
Easy paralleling
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com/emcon/
Applications:
Welding
Motor drives
PG-TO247-3
Type
IDW75E60
V
RRM
600V
I
F
75A
V
F,Tj=25°C
1.65V
T
j,max
175C
Marking
D75E60
Package
PG-TO247-3
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
T
C
= 25C
T
C
= 90C
T
C
= 100C
Surge non repetitive forward current
T
C
= 25C,
t
p
= 10 ms, sine halfwave
Maximum repetitive forward current
T
C
= 25C,
t
p
limited by
t
j,max
, D
= 0.5
Power dissipation
T
C
= 25C
T
C
= 90C
T
C
= 100C
Operating junction temperature
Storage temperature
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
T
j
T
stg
T
S
P
tot
300
170
150
-40…+175
-55...+150
260
°C
W
I
FSM
I
FRM
I
F
120
82
75
220
225
A
A
A
Symbol
V
RRM
Value
600
Unit
V
IFAG IPC TD VLS
1
Rev. 2.2 20.09.2013
IDW75E60
Thermal Resistance
Parameter
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
R
thJA
40
R
thJC
0.5
K/W
Symbol
Conditions
Max. Value
Unit
Static Characteristic
Collector-emitter breakdown voltage
Diode forward voltage
V
RRM
V
F
I
R
=0.25mA
600
-
-
-
-
-
1.65
1.65
-
-
-
2.0
-
V
I
F
= 75 A
T
j
=2 5
C
T
j
=1 7 5 C
Reverse leakage current
I
R
V
R
= 6 00 V
T
j
=2 5
C
T
j
=1 7 5 C
40
2500
A
Dynamic Electrical Characteristics
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rr
dI
r r
/ d t
T
j
=2 5
C
V
R
= 4 00 V ,
I
F
= 7 5 A,
dI
F
/ dt
= 1 46 0 A/ µs
-
-
-
-
121
2.4
38.5
921
-
-
-
-
ns
µC
A
A/µs
t
rr
Q
rrm
I
rr
dI
r r
/ d t
T
j
=1 2 5 C
V
R
= 4 00 V ,
I
F
= 7 5 A,
dI
F
/ dt
= 1 46 0 A/ µs
-
-
-
-
155
4.4
46.6
960
-
-
-
-
ns
µC
A
A/µs
t
rr
Q
rrm
I
rr
dI
r r
/ d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 7 5 A,
dI
F
/ dt
= 1 46 0 A/ µs
-
-
-
-
182
5.8
56.2
1013
-
-
-
-
ns
µC
A
A/µs
IFAG IPC TD VLS
2
Rev. 2.2 20.09.2013
IDW75E60
300W
120A
250W
P
tot
,
POWER DISSIPATION
I
F
,
FORWARD CURRENT
90A
200W
150W
60A
100W
30A
50W
0W
25°C
50°C
75°C
100°C
125°C
150°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 1. Power dissipation as a function of
case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 2. Diode forward current as a
function of case temperature
(T
j
175C)
200A
T
J
=25°C
2.0V
I
F
=150A
150A
V
F
,
FORWARD VOLTAGE
175°C
I
F
,
FORWARD CURRENT
1.5V
75A
100A
37.5A
1.0V
50A
0.5V
0A
0V
1V
2V
0.0V
0°C
50°C
100°C
150°C
V
F
,
FORWARD VOLTAGE
Figure 3. Typical diode forward current as
a function of forward voltage
T
J
,
JUNCTION TEMPERATURE
Figure 4. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
3
Rev. 2.2 20.09.2013
IDW75E60
Q
rr
,
REVERSE RECOVERY CHARGE
200ns
5µC
t
rr
,
REVERSE RECOVERY TIME
T
J
=175°C
T
J
=175°C
4µC
150ns
3µC
100ns
T
J
=25°C
50ns
2µC
T
J
=25°C
1µC
0ns
1000A/µs
1500A/µs
0µC
1000A/µs
1500A/µs
di
F
/dt,
DIODE CURRENT SLOPE
Figure 5. Typical reverse recovery time as
a function of diode current slope
(V
R
=400V,
I
F
=75A,
Dynamic test circuit in Figure E)
di
F
/dt,
DIODE CURRENT SLOPE
Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(V
R
= 400V,
I
F
= 75A,
Dynamic test circuit in Figure E)
T
J
=175°C
60A
-1200A/µs
T
J
=175°C
I
rr
,
REVERSE RECOVERY CURRENT
OF REVERSE RECOVERY CURRENT
di
rr
/dt,
DIODE PEAK RATE OF FALL
-1000A/µs
50A
40A
T
J
=25°C
-800A/µs
T
J
=25°C
30A
20A
10A
0A
1000A/µs
1500A/µs
-600A/µs
-400A/µs
-200A/µs
0A/µs
1000A/µs
1500A/µs
di
F
/dt,
DIODE CURRENT SLOPE
Figure 7. Typical reverse recovery current
as a function of diode current
slope
(V
R
= 400V,
I
F
= 75A,
Dynamic test circuit in Figure E)
di
F
/dt,
DIODE CURRENT SLOPE
Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V
R
=400V,
I
F
=75A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
4
Rev. 2.2 20.09.2013
IDW75E60
Z
thJC
,
TRANSIENT THERMAL IMPEDANCE
D=0.5
10 K/W
-1
0.2
0.1
0.05
0.02
0.01
R
,(K/W)
0.0556
0.1757
0.12374
0.12192
0.02305
R
1
,
(s)
0.1495
0.02797
3.623 E-3
3.276 E-4
2.635 E-5
R
2
10 K/W
-2
C
1
=
1
/R
1
C
2
=
2
/R
2
single pulse
1µs
10µs
100µs
1ms
10ms 100ms
t
P
,
PULSE WIDTH
Figure 9. Diode transient thermal
impedance as a function of pulse
width
(D=t
P
/T)
IFAG IPC TD VLS
5
Rev. 2.2 20.09.2013
