ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW40N65R5
Datasheet
IndustrialPowerControl
IHW40N65R5
ResonantSwitchingSeries
Reverse-ConductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicreverse-conductingdiodewithlowforward
voltage
•TRENCHSTOP
TM
technologyoffers:
-verytightparameterdistribution
-highruggednessandstabletemperaturebehavior
-verylowV
CEsat
andlowE
off
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinV
CEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductioncooking
•Inverterizedmicrowaveovens
•Resonantconverters
G
C
E
C
G
E
KeyPerformanceandPackageParameters
Type
IHW40N65R5
V
CE
650V
I
C
40A
V
CEsat
,T
vj
=25°C
1.35V
T
vjmax
175°C
Marking
H40ER5
Package
PG-TO247-3
2
Rev.2.3,2015-12-22
IHW40N65R5
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.2.3,2015-12-22
IHW40N65R5
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
tot
T
vj
T
stg
Value
650
80.0
40.0
120.0
120.0
32.0
19.0
120.0
±20
230.0
115.0
-40...+175
-55...+150
260
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Nm
M
0.6
Max.Value
Unit
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.65
2.85
40
K/W
K/W
K/W
4
Rev.2.3,2015-12-22
IHW40N65R5
ResonantSwitchingSeries
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=40.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=40.0A
T
vj
=25°C
T
vj
=175°C
I
C
=0.40mA,V
CE
=V
GE
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=40.0A
650
-
-
-
-
3.2
-
-
-
-
-
1.35
1.60
1.70
2.00
4.0
-
1000
-
96.0
none
-
1.70
-
2.10
-
4.8
40
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
F
V
GE(th)
I
CES
I
GES
g
fs
r
G
V
V
µA
nA
S
Ω
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=520V,I
C
=40.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
4740
44
19
193.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=40.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.0Ω,R
G(off)
=10.0Ω,
Lσ=70nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
34
25
260
13
1.10
0.37
1.47
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
5
Rev.2.3,2015-12-22
